Results 171 to 180 of about 1,226,452 (264)

Single‐Step Synthesis of In‐plane 1T'‐2H Heterophase MoTe2 for Low‐Resistance Contacts

open access: yesAdvanced Functional Materials, EarlyView.
A single‐step CVD method is developed to synthesize seamless in‐plane 1T'‐2H MoTe2 heterophase junctions with precise phase control and uniform large‐area coverage. The resulting transistors, incorporating 1T' MoTe2 contacts and 2H MoTe2 channels, exhibit ultralow contact resistance, offering a scalable solution to the long‐standing challenge of ...
Ye Lin   +9 more
wiley   +1 more source

Gravitational form factors of the Higgs boson. [PDF]

open access: yesEur Phys J C Part Fields
Beißner P   +3 more
europepmc   +1 more source

Unveiling Phonon Contributions to Thermal Conductivity and the Applicability of the Wiedemann—Franz Law in Ruthenium and Tungsten Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Thermal transport in Ru and W thin films is studied using steady‐state thermoreflectance, ultrafast pump–probe spectroscopy, infrared‐visible spectroscopy, and computations. Significant Lorenz number deviations reveal strong phonon contributions, reaching 45% in Ru and 62% in W.
Md. Rafiqul Islam   +14 more
wiley   +1 more source

Beyond the local density approximation : improving density functional theory for high energy density physics applications.

open access: green, 2006
Ann E. Mattsson   +5 more
openalex   +2 more sources

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

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