Transport signatures of gate-tunable topological phase transition in ultrathin <i>β</i>-Ag<sub>2</sub>Te. [PDF]
Ai W +11 more
europepmc +1 more source
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim +9 more
wiley +1 more source
Maximizing the fidelity of a photovoltaic subretinal prosthesis for human patients. [PDF]
Jensen N +4 more
europepmc +1 more source
Suppression of Interface Traps and Improved Breakdown in Recessed-Gate AlGaN/GaN MISHEMTs Using Low-Temperature Nitrogen Passivation. [PDF]
Chen HC +6 more
europepmc +1 more source
Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]
Tan WH +7 more
europepmc +1 more source
The electrical characteristics of Nanosheet FET within the quasi-ballistic transport: Role of scattering and temperature variation. [PDF]
Shubham, Pandey RK.
europepmc +1 more source
Quantifying and Minimizing the Variance of Gradient Insulator-Based Dielectrophoresis. [PDF]
Nguyen H, Rasel AKMFK, Hayes MA.
europepmc +1 more source
Low-Dose Vitamin C-Based Electroporation of Solid Tumors: A New Area in Non-Cytotoxic Electrochemotherapy. [PDF]
YazdanParast SM +2 more
europepmc +1 more source

