Results 161 to 170 of about 348,225 (262)

Histogram analysis of diffusion kurtosis imaging for T restaging and predicting complete response of locally advanced rectal cancer following neoadjuvant immunotherapy. [PDF]

Quant Imaging Med Surg
Jin Z, Zhang L, Yang F, Guo Y, Hao N, Liu Y, Chen M, Xu S, Lin Z, Sun P, Zheng N, Zheng C, Zhang T, Li X.   +13 more
europepmc   +1 more source

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

Advanced Materials, EarlyView.
Through precise epitaxial engineering, the cubic and paraelectric KTaO3${\rm KTaO}_3$ is transformed into a robust ferroelectric. By leveraging lattice‐mismatched substrates to apply controlled epitaxial strain, a stable ferroelectric ground‐state is achieved with a transition temperature as high as 475 K, establishing KTaO3${\rm KTaO}_3$ as a highly ...
Tobias Schwaigert, Salva Salmani‐Rezaie, Sankalpa Hazra, Utkarsh Saha, Maya Ramesh, Aiden Ross, Betül Pamuk, Long‐Qing Chen, David A. Muller, Darrell G. Schlom, Venkatraman Gopalan, Kaveh Ahadi   +11 more
wiley   +1 more source

A Comparative Study on the Influence of Zirconia and Titanium Nanoparticles on the Functionality of Osteocytes In Vitro. [PDF]

Int J Dent
Matouk MH, Aghila Rani KG, Kheder W, Ismail A, Samsudin AR, AlKawas S.   +5 more
europepmc   +1 more source

Transient Cytoskeletal Anisotropy Encodes Short‐Term Mechanical Memory in Glioblastoma Cells

Advanced Materials, EarlyView.
The same mechanical deformation can produce distinct cytoskeletal states depending on loading history. Experiments and constitutive modeling reveal that transient actin–vimentin anisotropy stores mechanical information and governs short‐term mechanical memory in glioblastoma cells.
Clara Gomez‐Cruz, Matthieu Gelin, Lucas Pradeau‐Phélut, Arrate Muñoz‐Barrutia, Sandrine Etienne‐Manneville, Daniel Garcia‐Gonzalez   +5 more
wiley   +1 more source

Impact of maras powder on mandibular bone microarchitecture: a fractal and radiomorphometric study. [PDF]

BMC Med Imaging
Ararat E, Talmaç AGÖ.
europepmc   +1 more source

Noise‐Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency‐Selective Time‐Series Signal Encoding

Advanced Materials, EarlyView.
Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim, Seoeun Jang, Hakseung Rhee, Min Gu Lee, Daehee Kim, Taewook Go, Woon Hyung Cheong, Hanchan Song, Kyung Min Kim   +8 more
wiley   +1 more source

A hybrid system for detecting semiconductor wafer defects using modified MobileNet with multi-head attention. [PDF]

PLoS One
Dhar S, Al Farid F, Islam MS, Uddin J, Mansor S.   +4 more
europepmc   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Scanning Tunneling Microscope-Based Break-Junction TechniqueA Tutorial. [PDF]

ACS Phys Chem Au
York E, Venkataraman L.
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source