Results 1 to 10 of about 70,264 (262)
A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection [PDF]
Micromachines, 2023 To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for ESD protection is proposed in this paper.
Zeen Han +6 more
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Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection [PDF]
Nanoscale Research Letters, 2019 A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing.
Zhuo Wang +5 more
doaj +2 more sources
SCR stacking structure with high holding voltage for high voltage power clamp
IEICE Electronics Express, 2011 The latch-up immunity of high voltage power clamps used in high voltage ESD protection devices is rapidly becoming very important in high-voltage applications. The conventional high-voltage ESD devices are unsuitable for new high-voltage applications due to their low holding voltage, low ESD robustness, and their large size.
Yong Seo Koo
exaly +3 more sources
A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application
IEEE Journal of the Electron Devices Society, 2019 Dual-directional silicon-controlled rectifiers (DDSCRs), which provide both positive and negative electrostatic discharge (ESD) surge paths, are ESD protection devices with an excellent area efficiency.
Kyoung-Il Do +2 more
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Recording and modeling of pinched hysteresis loops, the fingerprint of a memristor, in neurons [PDF]
Scientific ReportsA variant of the Hodgkin-Huxley model has been proposed in which time-varying Na+ and K+ ion conductances are replaced by memristors, based on the proposal that ion channels are memristors.
Oliver Pabst +5 more
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IEEE Journal of the Electron Devices Society, 2021 4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably wide
Kyoung-Il Do +3 more
doaj +1 more source
Effect of Low Voltage Electrostatic Field Combined with High Humidity Thawing on Water Holding Capacity of Frozen Lamb Meat [PDF]
Shipin Kexue, 2023 To investigate the effect of low voltage electrostatic field combined with high humidity thawing on the water-holding capacity of frozen lamb meat, lamb hindleg meat after 24 h of postmortem aging was frozen in a refrigerator at −18 ℃ for 24 h and then ...
YANG Chuan, WU Guangyu, LI Yingbiao, ZHANG Chunhui, LI Xia, LIU Chengjiang
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Machines, 2022 Digital hydraulic technology as an emergent and important branch of fluid power offers good prospects for intelligence, integration, and energy saving of hydraulic systems.
Zengguang Liu +5 more
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A Novel Low Dynamic Resistance Dual-Directional SCR With High Holding Voltage for 12 V Applications
IEEE Journal of the Electron Devices Society, 2020 The excellent area efficiency of dual-directional SCRs (DDSCRs) have made them desirable for low-voltage and high-voltage applications. However, to implement the required symmetrical structure, conventional DDSCRs have to lengthen their ESD discharge ...
Kyoung-Il Do, Yong-Seo Koo
doaj +1 more source
Energies, 2022 Effective sorting and extraction of tiny plastic objects is becoming increasingly important for manufacturing high-quality recycled plastics. Herein, we designed a manipulation device for tiny objects that can drive multiple target objects individually ...
Isao Shirota, Keiichiro Yoshida
doaj +1 more source