Results 1 to 10 of about 72,792 (298)
A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection [PDF]
Micromachines, 2023 To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for ESD protection is proposed in this paper.
Zeen Han +6 more
doaj +3 more sources
Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection [PDF]
Nanoscale Research Letters, 2019 A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing.
Zhuo Wang +5 more
doaj +2 more sources
Micromachines, 2021 In this paper, we report a novel laterally actuated Radio Frequency (RF) Microelectromechanical Systems (MEMS) switch, which is based on a combination of electrothermal actuation and electrostatic latching hold.
Yong Zhu, Jitendra Pal
doaj +2 more sources
A New High Holding Voltage Dual-Direction SCR With Optimized Segmented Topology
IEEE Electron Device Letters, 2016 While silicon controlled rectifiers (SCRs) are highly robust electrostatic discharge (ESD) protection devices, they typically are not suited for high-voltage ESD protection due to their inherently low holding voltage and thus vulnerability to latch-up ...
Xiaozong Huang +2 more
exaly +2 more sources
A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application
IEEE Journal of the Electron Devices Society, 2019 Dual-directional silicon-controlled rectifiers (DDSCRs), which provide both positive and negative electrostatic discharge (ESD) surge paths, are ESD protection devices with an excellent area efficiency.
Kyoung-Il Do +2 more
exaly +3 more sources
Crystals, 2021 In liquid crystal (LC) displays, deriving an optimum resistance level of an LC alignment polyimide (PI) layer is important because of the trade-off between the voltage holding and surface-discharging properties. In particular, to apply a power-saving low-
Jeong-Hoon Ko +4 more
doaj +2 more sources
Optimization of the drain-side configuration in ESD-protection SCR-LDMOS for high holding-voltage applications [PDF]
Microelectronics ReliabilityA conventional silicon-controlled rectifier integrated into a laterally diffused MOSFET (SCR-LDMOS) is studied through 2D TCAD simulations in order to obtain the maximum holding voltage without increasing the area consumption or degrading the power-to ...
Elena Gnani, S Reggiani, G Boselli
exaly +2 more sources
Recording and modeling of pinched hysteresis loops, the fingerprint of a memristor, in neurons [PDF]
Scientific ReportsA variant of the Hodgkin-Huxley model has been proposed in which time-varying Na+ and K+ ion conductances are replaced by memristors, based on the proposal that ion channels are memristors.
Oliver Pabst +5 more
doaj +2 more sources
Journal of Food Quality, 2019 In order to investigate the thawing time and water-holding capacity under high-voltage electric field (HVEF), we studied the thawing experiments of frozen beef in a multiple needles-to-plate electrode system.
Yaming Zhang +4 more
doaj +2 more sources
IEEE Journal of the Electron Devices Society, 2021 4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably wide
Kyoung-Il Do +3 more
doaj +1 more source