Results 81 to 90 of about 281,496 (245)

Unrevealing the Carrier Dynamics Behavior of Cu–In–Zn–S‐Based Quantum Dot Light‐Emitting Diodes by Transient Electroluminescence Spectroscopy

open access: yesAdvanced Physics Research
The device performance of Cu–In–Zn–S (CIZS)‐based quantum‐dot light‐emitting diodes (QLEDs) still lags far behind CdSe‐based QLEDs, which mainly arise from unique trap‐related recombination in the CIZS quantum dots (QDs).
Jinxing Zhao   +7 more
doaj   +1 more source

Layer-Resolved Ultrafast XUV Measurement of Hole Transport in a Ni-TiO2-Si Photoanode [PDF]

open access: yes, 2019
Metal-oxide-semiconductor junctions are central to most electronic and optoelectronic devices. Here, the element-specificity of broadband extreme ultraviolet (XUV) ultrafast pulses is used to measure the charge transport and recombination kinetics in ...
Cushing, Scott K.   +7 more
core   +3 more sources

Device optimization Based on Electrical and Optical Simulation of Tris(8-hydroxyquinoline) Aluminium Based Microacavity Organic Light Emitting Diode (MOLED) [PDF]

open access: yes, 2005
OLED has emerged as a potential candidate for applications in display devices due to its prominent advantages in size, brightness and wide viewing angle.
Chan, J   +3 more
core  

Coulomb Drag in the Exciton Regime in Electron-Hole Bilayers

open access: yes, 2008
We report electrical transport measurements on GaAs/AlGaAs based electron-hole bilayers. These systems are expected to make a transition from a pair of weakly coupled two-dimensional systems to a strongly coupled exciton system as the barrier between the
C. P. Morath   +4 more
core   +1 more source

Performance improvement of GaN-based vertical cavity surface emitting laser by employing a hole storage layer and enhancing the carrier transport behavior

open access: yesResults in Physics
In this paper, the transport behavior of carriers between multiple quantum wells (vertical) and inside a single quantum well (radial) in a GaN-based Vertical Cavity Surface Emitting Laser (VCSEL) is investigated, and a new device structure with a hole ...
Yachen Wang   +6 more
doaj   +1 more source

Dislocation-assisted electron and hole transport in GaN epitaxial layers

open access: yesNature Communications
Dislocations significantly influence carrier transport in semiconductors. While segments orthogonal to the channel act as scattering centers impeding conduction, electrically active dislocation cores can facilitate carrier transport. However, the mechanisms governing carrier transport along dislocation cores remain unclear.
Yixu Yao   +20 more
openaire   +1 more source

Transport properties of an electron-hole bilayer/superconductor hybrid junction

open access: yes, 2017
We investigate the transport properties of a junction consisting of an electron-hole bilayer in contact with normal and superconducting leads. The electron-hole bilayer is considered as a semi-metal with two electronic bands. We assume that in the region
Bercioux, D.   +2 more
core   +1 more source

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