Results 181 to 190 of about 150,727 (214)

On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor‐based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time‐series ...
Rishona Daniels   +4 more
wiley   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram   +10 more
wiley   +1 more source

Towards Real‐Time Monitoring of Soft Robotic Systems in Endoscopic Application With Ultra‐Flexible Organic Transistor‐Based Strain Sensors

open access: yesAdvanced Electronic Materials, EarlyView.
The integration of ultra‐flexible, all‐organic, field‐effect transistor‐based strain sensors to soft structures is reported for the development of sensorized soft robots. The envisaged application is the development of next‐generation, controllable, and observable soft robotic catheters for endoscopic applications, such as drug delivery. Mechanical and
Usama Mahmood   +5 more
wiley   +1 more source

iDeepLC: Chemical Structure Information Yields Improved Retention Time Prediction of Peptides with Unseen Modifications. [PDF]

open access: yesAnal Chem
Nameni A   +10 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

open access: yesAdvanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

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