Results 171 to 180 of about 498,367 (290)

Beyond the Non‐Hermitian Skin Effect: Scaling‐Controlled Topology from Exceptional‐Bound Bands

open access: yesAdvanced Science, EarlyView.
ABSTRACT We establish a novel mechanism for topological transitions in non‐Hermitian systems that are controlled by the system size. Based on a new paradigm known as exceptional‐bound (EB) band engineering, its mechanism hinges on the unique critical scaling behavior near an exceptional point, totally unrelated to the well‐known non‐Hermitian skin ...
Mengjie Yang, Ching Hua Lee
wiley   +1 more source

Pulsational instabilities in hot pre-horizontal branch stars [PDF]

open access: diamond, 2017
Tiara Battich   +3 more
openalex   +1 more source

Interplay of Crystallization and Amorphous Spinodal Decomposition During Thermal Annealing of Organic Photoactive Layers

open access: yesAdvanced Science, EarlyView.
Phase‐Field simulations are carried out to elucidate nanomorphology formation mechanisms in organic photoactive layers under thermal annealing. The predicted bulk heterojunction structures are in excellent agreement with Scanning Electron Microscopy measurements.
Maxime Siber   +3 more
wiley   +1 more source

Emerging Advanced Electronic Packaging Materials for Thermal Management in Power Electronics

open access: yesAdvanced Science, EarlyView.
This review surveys emerging materials for thermal management in advanced electronic packaging, with emphasis on ceramic substrates and thermal interface materials. Multiscale simulations and mechanistic analyses are highlighted, alongside the emerging role of artificial intelligence in predicting thermal properties and guiding design, offering ...
Yongjun Huo   +11 more
wiley   +1 more source

Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2

open access: yesAdvanced Electronic Materials, EarlyView.
Heterostructures of SiOx and vertically aligned MoS2 exhibit reliable threshold switching by guiding Ag ion migration through van der Waals gaps. Compared to SiOx‐only devices, these heterostructures demonstrate higher switching voltages, faster switching speeds, and reduced variability.
Jimin Lee   +9 more
wiley   +1 more source

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