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On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices

open access: yesAdvanced Electronic Materials, EarlyView.
A scalable method for directly growing WS2 enables robust and persistent p‐type behavior in back‐gated FETs, independent of metal contacts, thickness, or ambient conditions. Electrical measurements reveal minimal Schottky barrier heights and stable thermionic transport, while first‐principles simulations suggest tungsten vacancies or WO3 species as the
Carlos Marquez   +14 more
wiley   +1 more source

Shedding Light on Common Misinterpretations in Photocatalyst Characterization

open access: yesAdvanced Energy Materials, EarlyView.
For heterogeneous semiconductor‐based photocatalysts, Marschall et al. highlight common misconceptions in material synthesis, characterization, and performance evaluation, together with detailed explanations on how to avoid them. The guidelines thus presented can help to improve reporting of photocatalyst performance in environmental applications, such
Roland Marschall   +2 more
wiley   +1 more source

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