Results 221 to 230 of about 213,722 (336)

Positive‐Tone Nanolithography of Antimony Trisulfide with Femtosecond Laser Wet‐Etching

open access: yesAdvanced Functional Materials, EarlyView.
A butyldithiocarbamic acid (BDCA) etchant is used to fabricate various micro‐ and nanoscale structures on amorphous antimony trisulfide (a‐Sb2S3) thin film via femtosecond laser etching. Numerical analysis and experimental results elucidate the patterning mechanism on gold (reflective) and quartz (transmissive) substrates.
Abhrodeep Dey   +12 more
wiley   +1 more source

Understanding Decoherence of the Boron Vacancy Center in Hexagonal Boron Nitride

open access: yesAdvanced Functional Materials, EarlyView.
State‐of‐the‐art computations unravel the intricate decoherence dynamics of the boron vacancy center in hexagonal boron nitride across magnetic fields from 0 to 3 T. Five distinct regimes emerge, dominated by nuclear spin interactions, revealing optimal coherence times of 1–20 µs in the 180–350 mT range for isotopically pure samples.
András Tárkányi, Viktor Ivády
wiley   +1 more source

Transparent Inorganic–Organic Bilayer Neural Electrode Array and Integration to Miniscope System for In Vivo Calcium Imaging and Electrophysiology

open access: yesAdvanced Functional Materials, EarlyView.
This study presents the BioCLEAR system, a highly transparent and conductive neural electrode array composed of silver nanowires (AgNWs) and doped PEDOT:PSS, enabling neural recordings with minimal optical artifacts. When integrated with a GRIN lens, this cost‐effective neural implant allows simultaneous electrophysiological recording and GCaMP6‐based ...
Dongjun Han   +17 more
wiley   +1 more source

Optimization of tribo-mechanical properties of kenaf/jute-SiC hybrid composites using integrated grey-fuzzy approach. [PDF]

open access: yesSci Rep
Murugan A   +6 more
europepmc   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

Home - About - Disclaimer - Privacy