Positive‐Tone Nanolithography of Antimony Trisulfide with Femtosecond Laser Wet‐Etching
A butyldithiocarbamic acid (BDCA) etchant is used to fabricate various micro‐ and nanoscale structures on amorphous antimony trisulfide (a‐Sb2S3) thin film via femtosecond laser etching. Numerical analysis and experimental results elucidate the patterning mechanism on gold (reflective) and quartz (transmissive) substrates.
Abhrodeep Dey +12 more
wiley +1 more source
Development of graphene-modified jute/glass hybrid composites <i>via</i> fiber wrapping for enhanced structural applications. [PDF]
Islam M +5 more
europepmc +1 more source
Understanding Decoherence of the Boron Vacancy Center in Hexagonal Boron Nitride
State‐of‐the‐art computations unravel the intricate decoherence dynamics of the boron vacancy center in hexagonal boron nitride across magnetic fields from 0 to 3 T. Five distinct regimes emerge, dominated by nuclear spin interactions, revealing optimal coherence times of 1–20 µs in the 180–350 mT range for isotopically pure samples.
András Tárkányi, Viktor Ivády
wiley +1 more source
Experimental impact study on unidirectional glass-carbon hybrid composite laminates [PDF]
A. Arockia Julias, Vela Murali
openalex +1 more source
This study presents the BioCLEAR system, a highly transparent and conductive neural electrode array composed of silver nanowires (AgNWs) and doped PEDOT:PSS, enabling neural recordings with minimal optical artifacts. When integrated with a GRIN lens, this cost‐effective neural implant allows simultaneous electrophysiological recording and GCaMP6‐based ...
Dongjun Han +17 more
wiley +1 more source
Optimization of tribo-mechanical properties of kenaf/jute-SiC hybrid composites using integrated grey-fuzzy approach. [PDF]
Murugan A +6 more
europepmc +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source
Exploiting the mechanical properties and optimising wear characteristics of Mg-Al-Zn hybrid composites reinforced with Si<sub>3</sub>N<sub>4</sub> and MoS<sub>2</sub>. [PDF]
Anbuchezhiyan G +5 more
europepmc +1 more source

