Results 191 to 200 of about 386,126 (244)

Dual‐Inductive and Programmable Switching: A New Paradigm in Ionic Interface‐Controlled Perovskite Memory

Advanced Functional Materials, EarlyView.
A fully programmable, dual‐inductive switchable halide perovskite memristor is demonstrated through precise BDAI2‐mediated interface engineering. This ion‐modulating layer suppresses stochastic filamentary growth, enabling stable, non‐filamentary switching via dynamic barrier modulation.
So‐Yeon Kim, Juan Bisquert
wiley   +1 more source

The Ni,Cd Heteroatoms‐Initiated Synergistic Tuning of Electron Configuration in Fe2VO4 Nanosheets Electrocatalysts to Profoundly Stabilize Alkaline Seawater Electrolysis

Advanced Functional Materials, EarlyView.
A Ni,Cd‐codoped Fe2VO4/NF bifunctional electrocatalyst is rationally designed for efficient seawater electrolysis. Synergistic effect modulates electron configuration, optimizes intermediates adsorption, stabilizes high‐valence Fe/V sites, and repels chloride ions to suppress corrosion and side reactions, thus contributing to performance improvement of
Weiguo Huang, Bin Fang, Tao Meng, Xiaodong Chen, Ya Chen, Xin Gao, Fei Liang, Hongchao Sun, Jiangmin Zou, Chao Yuan, Yuanyuan Shao, Peiyi Ji, Yangang Wang, Lifeng Cui, Guoxiu Wang, Duu‐Jong Lee   +15 more
wiley   +1 more source

Dipole‐Engineered Conductive Additives for Ultrastable Interphase Evolution in High‐Areal‐Capacity Silicon Anodes

Advanced Functional Materials, EarlyView.
In the work reported herein, dipole‐engineered sulfonated carbon nanofibers enable conductive additives to actively regulate interphase formation in silicon anodes. Polar sulfonyl groups guide electrolyte decomposition to form a compact LiF‐rich interphase while promoting robust integration with silicon.
Song Kyu Kang, Hyeonju Kim, Jeongbin Cho, Minseon Park, Taehun Kim, Seonghun Sin, Won Bae Kim   +6 more
wiley   +1 more source

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Hydrogen diffusion in α-Fe2O3: Implication for an effective hydrogen diffusion barrier

International Journal of Hydrogen Energy, 2020
Abstract Hydrogen diffusion plays a key role in hydrogen embrittlement which leads to the failure of metals. In the present work, hydrogen diffusions in Fe and α-Fe2O3 were studied by first-principles calculations. The results show the energy barrier of hydrogen diffusion in pure Fe is small and hydrogen atom has a high diffusivity at ambient ...
Jianbin Wu, Jianlin Cheng, Min Wu
exaly   +2 more sources

Diffusion of Hydrogen in Niobium

Physical Review Letters, 1988
The diffusion rate of H and D in Nb is calculated with avoidance of the usual adiabatic, linear-coupling, and Condon approximations. The method employed is a generalization of the standard small-polaron theory with explicit account taken of the coupled interstitial-host vibrations.
, Schober, , Stoneham
openaire   +2 more sources

Diffusion of hydrogen in BCC metals

Scripta Metallurgica, 1985
On reexamine la diffusion de l'hydrogene dans la direction dans la theorie classique en utilisant un modele ou les atomes d'hydrogene migrent a travers les deux parcours alternatifs de sequences de sites T-T et T-O-T dans le but de savoir jusqu'a quel point un modele peut expliquer les aspects generaux de la diffusion de l'hydrogene dans les cristaux
Y. Sakamoto, K. Baba, T. Suehiro
openaire   +1 more source

Hydrogen chemical potentials and diffusion coefficients in hydrogen diffusion membranes

Nature, 1983
Palladium and palladium alloys are quite widely used as membranes for hydrogen permeation, because of their resistance to embrittlement and to irreversible deformations during cycles of absorption and desorption of hydrogen1–3. The isothermal relationships between hydrogen diffusion coefficient, DH, and hydrogen content, n (ratio of hydrogen/metal ...
F. A. Lewis, J. P. Magennis, S. G. McKee, P. J. M. Ssebuwufu   +3 more
openaire   +1 more source

Silicon-Hydrogen Bonding and Hydrogen Diffusion in Amorphous Silicon

MRS Proceedings, 1995
ABSTRACTDespite its importance for technological applications, the behavior of hydrogen in amorphous silicon is not fully understood. In particular, the anomalously low activation energy (1.5 eV) for hydrogen diffusion has remained unexplained. We investigate the interaction of hydrogen with dangling bonds using first-principles pseudopotential-density-
, Van de Walle CG, , Street
openaire   +2 more sources

Diffusion of Hydrogen in Hydrogen-Quenched Nickel

Japanese Journal of Applied Physics, 1977
The recovery process of hydrogen dissolved in excess in nickel is studied by means of the hydrogen-quenching method which is a modified Schultz's method. Two recovery stages of electrical resistance are found. The lower temperature stage is a new one which presumably arises from trapping and/or clustering of hydrogen atoms in the interior of the ...
Kohji Yamakawa, Francisco Eiichi Fujita
openaire   +1 more source

Anomalous Diffusion of Hydrogen and the Dependence of the Diffusion Constants on Hydrogen Content in Hydrogenated Amorphous Silicon

MRS Proceedings, 1992
ABSTRACTThe diffusion constant of hydrogen DH(t) in hydrogenated amorphous silicon (a-Si:H) is strongly dependent on the Si-bonded H content CH of the films. It increases by over four orders of magnitude for CH ranging from 1 to 19 at. %. In an rf sputter-deposited film of CH ∼5 at. % it increases with time at 300 ≤ T ≤ 362°C.
R. Shinar, H. Jia, X.-L. Wu, J. Shinar
openaire   +1 more source