Results 201 to 210 of about 966,659 (353)

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

Solvent‐Free Manufacturing of Multifunctional Gas Diffusion Electrode Architectures for Enhanced CO2 Conversion From Low‐Concentration Streams

open access: yesAdvanced Functional Materials, EarlyView.
A tandem gas diffusion electrode (GDE) leveraging hierarchically engineered microgranules enables efficient CO2 electroreduction under dilute CO2 conditions. A key innovation lies in the solvent‐free precision assembly of metal–organic‐frameworks, carbon nanotubes, and copper nanoparticles.
Kai‐Jen Wu   +7 more
wiley   +1 more source

Reversible color switching of bright phosphorescence in purely organic materials for advanced data encryption. [PDF]

open access: yesNat Commun
Heo JM   +8 more
europepmc   +1 more source

Engineering Hydrogen‐Down Water Configurations for Ampere‐Level Electrochemical CO2 Reduction to Formate

open access: yesAdvanced Functional Materials, EarlyView.
Electrochemical CO2 reduction (ECR) to formate is a promising route for sustainable chemical production. Herein, we report the synthesis catalysed byBi‐HfO2@C. The AIMD simulations, DFT calculations, and in situ SEIRAS measurements show that the modification of HfO2 on the Bi surface steers the interfacial water to adopt a favorable hydrogen‐down (OH2↓)
Xiao‐Dong Guo   +7 more
wiley   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li   +5 more
wiley   +1 more source

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