Results 111 to 120 of about 73,701 (230)

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

open access: yesAdvanced Functional Materials, EarlyView.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim   +3 more
wiley   +1 more source

Gourd‐Inspired Design of Unit Cell with Multiple Gradients for Physiological‐Range Pressure Sensing

open access: yesAdvanced Functional Materials, EarlyView.
Gourd‐shaped micro‐dome arrays with coordinated modulus, conductivity, and geometric gradients co‐optimize sensitivity and linearity in piezoresistive tactile sensors. Under pressure, a solid upper dome embeds into a porous lower dome, triggering rapid contact‐area growth and series‐to‐parallel conduction, enabling unsaturated, intensity‐resolved ...
Jiayi Xu   +6 more
wiley   +1 more source

Indirect Band Edge and Chain‐Locked Linear Dichroism in the Quasi‐1D Van der Waals Antiferromagnet AgCrP2S6

open access: yesAdvanced Functional Materials, EarlyView.
AgCrP2S6 reveals a momentum‐indirect band edge (≈1.35 eV) and chain‐locked linear dichroism: the first direct transitions emerge at 1.6–1.8 eV for E||a. Resonant Raman and photoemission corroborate this assignment. In ACPS/graphene heterostructures, photocurrent turns on above ≈1.5 eV and follows the same polarization selection rules (anisotropy ≈0.53),
Oleksandr Volochanskyi   +9 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

open access: yesAdvanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit   +5 more
wiley   +1 more source

Frontier Advances of Emerging High‐Entropy Anodes in Alkali Metal‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Recent advances in microscopic morphology control of high‐entropy anode materials for alkali metal‐ion batteries. Abstract With the growing demand for sustainable energy, portable energy storage systems have become increasingly critical. Among them, the development of rechargeable batteries is primarily driven by breakthroughs in electrode materials ...
Liang Du   +14 more
wiley   +1 more source

MagPiezo: A Magnetogenetic Platform for Remote Activation of Endogenous Piezo1 Channels in Endothelial Cells

open access: yesAdvanced Functional Materials, EarlyView.
MagPiezo enables wireless activation of endogenous Piezo1 channels without genetic modification using 19 nm magnetic nanoparticles and low‐intensity magnetic fields. It generates torque forces at the piconewton scale to trigger mechanotransduction in endothelial cells, standing as a novel platform to interrogate and manipulate Piezo1 activity in vitro.
Susel Del Sol‐Fernández   +7 more
wiley   +1 more source

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