Results 181 to 190 of about 506,823 (306)
This review highlights how machine learning (ML) algorithms are employed to enhance sensor performance, focusing on gas and physical sensors such as haptic and strain devices. By addressing current bottlenecks and enabling simultaneous improvement of multiple metrics, these approaches pave the way toward next‐generation, real‐world sensor applications.
Kichul Lee +17 more
wiley +1 more source
The concept of foulant particle manipulation and detachment from active microfiltration membranes via voltage‐driven vibrations is introduced. Actuator components are initially integrated onto the filtration membranes using an airbrush spray printing technique.
Irem Gurbuz, Hanieh Bazyar, Andres Hunt
wiley +1 more source
The Experimental Study on Relative Permeability Hysteresis in CO<sub>2</sub>‑Enhanced Oil Recovery and Sequestration Processes. [PDF]
Cao S +10 more
europepmc +1 more source
Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods +15 more
wiley +1 more source
Ferroelectricity in graphene nanoribbon devices enabled by collective water molecule dynamics. [PDF]
Aslam MA +12 more
europepmc +1 more source
Enzymatically crosslinked gelatin‐based organohydrogels, fabricated through a fully bio‐based and scalable process, exhibit exceptional strain and temperature sensing capabilities with minimal interference from environmental humidity. These transparent, stretchable, and ionically conductive materials operate without synthetic fillers or dopants.
Pietro Tordi +7 more
wiley +1 more source
Coupling of diffusion-dissolution-deformation on the nature of sorption hysteresis in nanoporous shale kerogen. [PDF]
Huang L +9 more
europepmc +1 more source
Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki +7 more
wiley +1 more source
Mechanical Modelling of Static Hysteresis in Under Ballast Mats Using a Novel Rheological Approach. [PDF]
Zbiciak A +4 more
europepmc +1 more source

