Results 191 to 200 of about 5,673,730 (326)

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

Advanced Functional Materials, Volume 36, Issue 13, 12 February 2026.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon, Dong Ho Lee, Seyoung Oh, Jongwon Yoon, Hyo‐Bae Kim, Ji‐Hoon Ahn, Woojin Park, Han Seul Kim, Byungjin Cho   +8 more
wiley   +1 more source

Organic Electrochemical Transistors for Neuromorphic Devices and Applications

Advanced Materials, Volume 38, Issue 9, 12 February 2026.
Organic electrochemical transistors are emerging as promising platforms for neuromorphic devices that emulate neuronal and synaptic activities and can seamlessly integrate with biological systems. This review focuses on resultant organic artificial neurons, synapses, and integrated devices, with an emphasis on their ability to perform neuromorphic ...
Kexin Xiang, Jiajun Song, Hong Liu, Junxin Chen, Feng Yan   +4 more
wiley   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu, Xiaoshi Qian, Dahong Qian, Paolo Samorì   +3 more
wiley   +1 more source

Intercalation‐Induced Phase Transitions in Ferroelectric α‐In2Se3

Advanced Science, Volume 13, Issue 9, 13 February 2026.
Using the electrolyte gating technique, the van der Waals ferroelectric semiconductor α‐In2Se3 undergoes a series of transitions from a ferroelectric semiconductor to a dirty metal and finally to a metal, accompanied by a structural transformation. Concurrently, the ferroelectric hysteresis window progressively narrows and eventually disappears with ...
Xin He, Zhihao Gong, Tao Wang, Baoyu Wang, Chen Liu, Ding Wang, Yinchang Ma, Pu Feng, Chenhui Zhang, Weijin Hu, Kai Liu, Hua Wang, Xixiang Zhang   +12 more
wiley   +1 more source

Ultrahigh High‐temperature Capacitive Energy Storage Via Proton Irradiation

Advanced Science, Volume 13, Issue 9, 13 February 2026.
Proton irradiation concurrently induces enhanced dielectric constant and breakdown field in aromatic polymers with ether bonds, which enables an ultrahigh discharged energy density of 6.9 J cm−3 at above the efficiency of 95% at 150 °C, exceeding current dielectric polymers and nanocomposites.
Chenyi Li, Hanxiao Gao, Yutie Gong, Yen‐Ting Lin, Yuquan Liu, Yuanqi Wang, Lan Chen, Hangyao Wu, Ling Cheng, Yang Li, Yang Liu, Huamin Zhou   +11 more
wiley   +1 more source

Ferroelectric–Electrolyte Hybrid Gate Dielectrics for Organic Synaptic Transistors with Long‐Term Plasticity

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Poor long‐term retention of organic electrochemical transistor (OECT) artificial synapses with poly(3,4‐ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) have been a major obstacle for precise emulation of synaptic functions, mainly because of uncontrollable diffusion of mobile ions.
Minsub Lee, Donghee Shin, Jaehui Cheon, Sumin Lee, Chanwoo Park, Jaegyun Im, Jaegeun Lee, Jin Hong Lee, Jong S. Park, Beomjin Jeong   +9 more
wiley   +1 more source

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
In this study, a nitride ferroelectric domain wall memory (FeDMEM) device with potential for scalable integration into conventional CMOS technology is demonstrated. The novel domain wall conduction phenomena and its reflection in the memristive response of fiber‐textured Pt/Al0.72Sc0.28N(20 nm)/Pt capacitors is examined, revealing high read currents ...
Georg Schönweger, Deik Dasenbrook, Niklas Kyoushi, Roberto Guido, Adrian Petraru, Thomas Mikolajick, Uwe Schröder, Hermann Kohlstedt, Simon Fichtner   +8 more
wiley   +1 more source

Is There A Pure Electronic Ferroelectric?

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
The search for faster, more reliable ferroelectric materials has shifted from traditional lattice‐driven ferroelectrics, which rely on slow ionic displacements, to electronic ferroelectrics, where polarization is governed by electronic ordering. This shift enables ultrafast switching, low‐field operation, and resistance to fatigue.
Xudong Wang, Guichen Teng, Xiangjian Meng, Zhenxiang Cheng, Tie Lin, Hao Shen, Xiaodan Wang, Jianlu Wang, Junhao Chu   +8 more
wiley   +1 more source

Research on Seismic and Self-Centering Performance of SMAF-ECC Prefabricated Self-Centering Frame Joints Based on Finite Element Simulation. [PDF]

Materials (Basel)
Cao Y, Wu Q, Yang Z.
europepmc   +1 more source

Designing Memristive Materials for Artificial Dynamic Intelligence

Advanced Intelligent Discovery, Volume 2, Issue 1, February 2026.
Key characteristics required of memristors for realizing next‐generation computing, along with modeling approaches employed to analyze their underlying mechanisms. These modeling techniques span from the atomic scale to the array scale and cover temporal scales ranging from picoseconds to microseconds. Hardware architectures inspired by neural networks
Youngmin Kim, Ho Won Jang
wiley   +1 more source