Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing. [PDF]
Kim JH +28 more
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Ferroelectric Dynamic-Field-Driven Nucleation and Growth Model for Predictive Materials-To-Circuit Co-Design. [PDF]
Liang Y +10 more
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A ferroelectric-ionic-trapping transistor for low power and secure neuromorphic computing. [PDF]
Han C +11 more
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The Coupling of Ferroelectric Polarization and Oxygen Vacancy Migration Enables Electrically Controlled Thermal Memories. [PDF]
Barneo D +13 more
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Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors. [PDF]
Das A +14 more
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Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]
Das A +18 more
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Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation. [PDF]
Chen X, Wang Z, Meng J, Wang T.
europepmc +1 more source
Approaching theoretical polarization limit in HfZrO2/HfLaO2 multilayers. [PDF]
Shi S +16 more
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Herpes zoster as a vaccine-preventable risk factor increases the risk of dementia: A nested case-control study in Chinese population. [PDF]
Jiang B +8 more
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Probabilistic computing utilizing HfO<sub>2</sub>-based stochastic ferroelectric tunnel junctions. [PDF]
Guan Z +9 more
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