Results 181 to 190 of about 148,137 (283)

Structured coherent thermal emission from non-Hermitian metasurfaces. [PDF]

open access: yesNat Commun
Sun K   +6 more
europepmc   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

Topological exciton-polaritons with negative coupling. [PDF]

open access: yesNat Commun
Yu Z   +5 more
europepmc   +1 more source

Pressure‐Induced Structural and Magnetic Evolution in Layered Antiferromagnet YbMn2Sb2

open access: yesAdvanced Electronic Materials, EarlyView.
Pressure tunes the delicate balance between structure, magnetism, and electronic states in quantum materials. In YbMn2Sb2, high‐pressure X‐ray and neutron diffraction reveal a trigonal‐to‐monoclinic transition near 3.5 GPa, accompanied by unconventional magnetic ordering.
Mingyu Xu   +9 more
wiley   +1 more source

Observation of topological braiding and dynamical criticality in time reflection and refraction. [PDF]

open access: yesNat Commun
Li Y   +8 more
europepmc   +1 more source

Topological Materials and Related Applications

open access: yesAdvanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti   +9 more
wiley   +1 more source

Role of Rare‐Earth Lanthanum Doping on Electrical Performance and Stability of Atomic Layer Deposition Processed Indium Oxide Thin‐Film Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
The work demonstrates La doping in In2O3 via ALD super‐cycles. The strong La─O bond suppresses oxygen vacancies, resulting in a decrease in mobility and a positive shift in threshold voltage. The effective suppression of VO decreases oxygen‐related defects under gate bias, leading to exceptional negative bias stability.
Jinxiu Zhao   +6 more
wiley   +1 more source

Orbital and Electrical Dual Function of Polymer Intercalant for Promoting NH4+ Storage in Vanadium Oxide Anode

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
The impact of polyaniline insertion on the atomic orbitals and electronic structure of vanadium oxide anode is systematically investigated for the first time. The electrode exhibits an outstanding capacity and unprecedent long‐term cycling life, owing to the electron transition to the V 3dxy state and the enhanced diffusion kinetics.
Yue Zhang   +6 more
wiley   +1 more source

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