Results 211 to 220 of about 4,105 (266)

Superlattices of II–VI semiconductors

Journal of Crystal Growth, 1987
Abstract Superlattices and microstructures involving II–VI semiconductors have been the subject of a great deal of interest for application to optoelectronics in the infrared and visible. The techniques of material fabrication provided by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) make it possible for us to ...
R.H. Miles, J.O. McCaldin, T.C. McGill
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Shape Control of II–VI Semiconductor Nanomaterials

Small, 2006
AbstractAnisotropic II–VI semiconductor nanocrystals and nanoparticles have become important building blocks for (potential) nanotechnological applications. Even though a wide variety of differently shaped nanoparticles of this class can be prepared, the underlying mechanisms are mostly not fully understood.
Kumar, Sandeep, Nann, Thomas
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Nanoparticles of II — VI Semiconductors

1998
Semiconductors with reduced dimensions viz. quantum wells, wires or dots have dramatically altered electronic structure compared to the corresponding bulk semiconductors. We have synthesised nanoparticles of II–VI semiconductors which exhibit size dependent properties.
S. K. Kulkarni, Manisha Kundu, Pramod Borse   +2 more
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Group II–VI Semiconductors

2019
II–VI semiconductors (compounds formed by group IIB metallic elements (Cd, Zn, and Hg) with group VI nonmetallic elements (O, S, Se, and Te)) have aroused intense interest in research and development. Because of its prominent optoelectronic properties for applications such as in thin-film photovoltaics, nanophotodetectors, and lasers, cadmium sulfide ...
Bindu Krishnan, Sadasivan Shaji, M. C. Acosta-Enríquez, E. B. Acosta-Enríquez, R. Castillo-Ortega, MA. E. Zayas, S. J. Castillo, Ilaria Elena Palamà, Eliana D’Amone, Martin I. Pech-Canul, Stefania D’Amone, Barbara Cortese   +11 more
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Isoelectronic oxygen in II-VI semiconductors

Applied Physics Letters, 1992
The properties of isoelectronic oxygen in II-VI semiconductors were studied by photoluminescence measurements. It was found that oxygen in CdTe, CdS, and ZnS can act as an acceptor as well as in ZnSe, and that the acceptor levels of oxygen in CdTe, CdSe, and ZnS are shallower than those of typical acceptors such as Na.
K. Akimoto, H. Okuyama, M. Ikeda, Y. Mori   +3 more
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Effective charges in II–VI semiconductors

Journal of Crystal Growth, 1992
Abstract The effective charges accounting for the partially ionic binding character of II–VI semiconductors are calculated in a simple theory based on the cohesive energy per unit cell, which is expressed as a sum of the Madelung energy and the Morse potential.
S.H. Sohn, D.G. Hyun, M. Noma, S. Hosomi, Y. Hamakawa   +4 more
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II-VI Semiconductor Compounds

1993
Molecular beam epitaxy of HgCdTe for photonic applications, J.M.Aries superlattices of II-VI compounds, K.Kumazabi transition metal-related non-radiative recombination process in II-VI, M.Godlewski MBE and photoassisted MBE growth of CdTe and CdTe/CdMnTe, R.N.Bicknell-Tassius devices and applications of II-VI semiconductor compounds,S.B.Colak II-VI ...
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Bound biexcitons in II–VI semiconductors

Solid State Communications, 1995
Abstract Biexcitons localized at neutral acceptor sites in the direct-gap II–VI semiconductors CdS and CdSe are identified with different spectroscopic techniques such as photoluminescence, two-photon absorption and nonlinear quantum beat spectroscopy (NQBS).
B.S. Razbirin, D.K. Nel'son, J. Erland, K.-H. Pantke, V.G. Lyssenko, J.M. Hvan   +5 more
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II-VI semiconductor quantum dots

2014
Recently, II-VI direct band-gap semiconductor materials have been studied intensively due to their potential applications in blue lasers. On the other hand, the electrical and optical properties of low dimensional semiconductor microstructures have been investigated for two decades because of their ultra-fast electrical and optical properties and ...
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