Results 161 to 170 of about 730,204 (345)

Quantum‐Grade Nanodiamonds from a Single‐Step, Industrial‐Scale Pressure and Temperature Process

open access: yesAdvanced Functional Materials, EarlyView.
Novel method for creation of nitrogen‐vacancy centers in 50‐nm nanodiamonds based on high‐temperature plastic deformation is demonstrated. Compared to the electron irradiation approach, it yields nitrogen‐vacancy centers with significantly improved charge stability, T1 relaxation time, and optical Rabi contrast.
Yahua Bao   +17 more
wiley   +1 more source

基于图像技术的齿面失效形式检测方法的研究

open access: yesJixie chuandong, 2014
Aiming at the main failure form of fear face,its image characteristics of extraction technology is studied.According to two different kinds of defects in the form of image,the defect area is extracted as the eigenvalue.By using gray level co-occurrence ...
程鹏飞, 徐永新
doaj  

GmFace: A Mathematical Model for Face Image Representation Using Multi-Gaussian [PDF]

open access: green, 2020
Liping Zhang   +7 more
openalex   +1 more source

Toward Scalable Solutions for Silver‐Based Gas Diffusion Electrode Fabrication for the Electrochemical Conversion of CO2 – A Perspective

open access: yesAdvanced Functional Materials, EarlyView.
In this study, the preparation techniques for silver‐based gas diffusion electrodes used for the electrochemical reduction of carbon dioxide (eCO2R) are systematically reviewed and compared with respect to their scalability. In addition, physics‐based and data‐driven modeling approaches are discussed, and a perspective is given on how modeling can aid ...
Simon Emken   +6 more
wiley   +1 more source

Masculinity in the public image of physics and mathematics: a new model comparing Japan and England

open access: green, 2021
Yuko Ikkatai   +5 more
openalex   +2 more sources

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

open access: yesAdvanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter   +4 more
wiley   +1 more source

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