Parasitic Coupling in 3D Sequential Integration: The Example of a Two-Layer 3D Pixel
Technologies, 2022 In this paper, we present a thorough analysis of parasitic coupling effects between different electrodes for a 3D Sequential Integration circuit example comprising stacked devices.
Petros Sideris +4 more
doaj +1 more source
Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors [PDF]
, 2011 Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors.
A. Bardoux +19 more
core +1 more source
Sensors, 2016 We report the first-ever intra-tissue pressure measurement performed during 1064 nm laser ablation (LA) of an ex vivo porcine liver. Pressure detection has been performed with a biocompatible, all-glass, temperature-insensitive Extrinsic Fabry-Perot ...
Daniele Tosi +6 more
doaj +1 more source
Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]
, 2009 An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Goiffon, Vincent +2 more
core +1 more source
Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors [PDF]
, 2013 This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters.
Pelamatti, Alice +4 more
core +1 more source
A Blockchain-Based Secure Image Encryption Scheme for the Industrial Internet of Things
Entropy, 2020 Smart cameras and image sensors are widely used in industrial processes, from the designing to the quality checking of the final product. Images generated by these sensors are at continuous risk of disclosure and privacy breach in the industrial Internet
Prince Waqas Khan, Yungcheol Byun
doaj +1 more source
Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [PDF]
, 2010 Interface and near oxide traps in small gate area MOS transistors (gate area ,1 mm2) lead to RTS noise which implies the emergence of noisy pixels in CMOS image sensors.
P. Magnan +5 more
core +1 more source
Photonics, 2016 Wavelength-selective infrared (IR) absorbers have attracted considerable interest due to their potential for a wide range of applications. In particular, they can be employed as advanced uncooled IR sensors that identify objects through their radiation ...
Shinpei Ogawa +3 more
doaj +1 more source
Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]
, 2012 This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Goiffon, Vincent +13 more
core +1 more source
Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes [PDF]
, 2012 CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been ...
Place, Sébastien +5 more
core +1 more source