Results 241 to 250 of about 82,713 (288)

Solution Shearing of Sustainable Aluminum Oxide Thin Films for Compliance‐Free, Voltage‐Regulated Multi‐Bit Memristors

Advanced Electronic Materials, EarlyView.
Solution shearing technique is reported to fabricate sustainable 15 nm AlOx thin films using de‐ionized water. Thermal annealing and deep UV exposure application assist the film formation. These films exhibit two‐order bipolar resistive switching, 100 cycles endurance, and >40 h retention. The compliance‐free memristor shows eight switching states with
Preetam Dacha, Anju Kumari R, Darius Pohl, Angelika Wrzesińska‐Lashkova, Alexander Tahn, Bernd Rellinghaus, Yana Vaynzof, Stefan C. B. Mannsfeld   +7 more
wiley   +1 more source

Exploring the interconnection between international crude oil and silver rates volatilities: Novel evidence from the COVID-19 pandemic. [PDF]

Heliyon
Zhou L, Gong Z, Tian L, Chen Z.
europepmc   +1 more source

Amorphous Gallium‐Oxide‐Based Non‐Filamentary Memristive Device with Highly Repeatable Multiple Resistance States

Advanced Electronic Materials, EarlyView.
A fully back‐end‐of‐line (BEOL) compatible memristive device is proposed using an amorphous gallium oxide (a‐GaOx) film grown by plasma‐enhanced atomic layer deposition. Bipolar resistive analog switching is achieved without requiring forming and with a self‐rectifying behavior.
Onur Toprak, Florian Maudet, Markus Wollgarten, Charlotte Van Dijck, Roland Thewes, Veeresh Deshpande, Catherine Dubourdieu   +6 more
wiley   +1 more source

Recurrent Neural Network GO-GARCH Model for Portfolio Selection. [PDF]

J Time Ser Econom
Burda M, Schroeder AK.
europepmc   +1 more source

Machine Learning‐Driven Surrogate Modeling for Optimization of Triboelectric Nanogenerator Design Parameters

Advanced Electronic Materials, EarlyView.
Design of Experiment and machine learning regression models are leveraged to analyze four process parameters (thickness, pore ratio, applied force, and frequency) of a contact‐separation triboelectric nanogenerator with graphene‐PDMS and aluminum layers using experimental data for the validation of predicted performance and the optimization of the ...
Mohammad Abrar Uddin, Myeongju Lim, Rubiga Kim, Barrett London Burgess, Ken Roberts, Junghyun Kim, Taeil Kim   +6 more
wiley   +1 more source

Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor

Advanced Electronic Materials, EarlyView.
This manuscript presents the first and simplest ever‐reported electrical cell, which leverages one memristor on Edge of Chaos to reproduce the three‐bifurcation cascade, marking the entire life cycle from birth to extinction via All‐to‐None effect of an electrical spike, also referred to as Action Potential, across axon membranes under monotonic ...
Alon Ascoli, Ahmet Samil Demirkol, Ioannis Messaris, Vasilis Ntinas, Dimitris Prousalis, Stefan Slesazeck, Thomas Mikolajick, Fernando Corinto, Michele Bonnin, Marco Gilli, Pier Paolo Civalleri, Ronald Tetzlaff, Leon Chua   +12 more
wiley   +1 more source

Optimization study of intelligent accounting manager system modules in adaptive behavioral pattern learning and simulation. [PDF]

PeerJ Comput Sci
Wang Y, Qin R, Mansoor M.
europepmc   +1 more source

Computational Intelligence Approach to Capturing the Implied Volatility

, 2015
Fahed Mostafa, Tharam S. Dillon, Elizabeth Chang   +2 more
openalex   +1 more source

Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
In this study, a novel 1D lead‐free metal halide, K2CuBr3, composed of earth‐abundant elements, is introduced for resistive switching and artificial synapse devices. With exceptionally low production costs and minimal environmental impact, K2CuBr3 can be a promising candidate for sustainable memory storage and neuromorphic computing.
Zijian Feng, Jiyun Kim, Jie Min, Peiyuan Guan, Shuo Zhang, Xinwei Guan, Tingting Mei, Tianxu Huang, Chun‐Ho Lin, Long Hu, Fandi Chen, Zhi Li, Jiabao Yi, Tom Wu, Dewei Chu   +14 more
wiley   +1 more source

Ferroelectric Compensation Effect of the Hard Electrode for the HfO2‐ZrO2 Superlattice Films at the Low‐Annealing Temperature

Advanced Electronic Materials, EarlyView.
The hafnia superlattice structure ferroelectric capacitors are clamped by electrodes with various hardness and annealed at 450 to 600 °C. It is found that the out‐of‐plane compressive stress caused by electrode hardness can offset the in‐plane tensile stress loss in hafnium‐based superlattice ferroelectric devices when the annealing temperature ...
Chuqian Zhu, Na Bai, Yufan Wang, Huajun Sun, Lanqing Zou, Yunhui Yi, Jiyang Xu, Jiawang Ren, Junming Zhang, Sheng Hu, Kanhao Xue, Lei Ye, Weiming Cheng, Qiang He, Xiangshui Miao   +14 more
wiley   +1 more source