Results 251 to 260 of about 82,713 (288)

CEO social capital and implied cost of capital: Based on the empirical evidence of Chinese family businesses. [PDF]

PLoS One
Qi Y, Zou Y, Shi F.
europepmc   +1 more source

Aluminum Scandium Nitride as a Functional Material at 1000 °C

Advanced Electronic Materials, EarlyView.
Aluminum scandium nitride (AlScN) exhibits remarkable ferroelectric, piezoelectric, and dielectric stability at extreme temperatures. This study demonstrates the robust performance of TaSi2/AlScN/TaSi2 capacitors up to 1000 °C, revealing a substantial increase in piezoelectricity and a marked reduction in coercive field.
Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao, David J. Spry, Garrett Baucom, Nicholas G. Rudawski, Tete Yin, Ethan Angerhofer, Philip G. Neudeck, Honggyu Kim, Philip X.‐L. Feng, Mark Sheplak, Roozbeh Tabrizian   +12 more
wiley   +1 more source

Oxygen Doping in Ferroelectric Wurtzite‐type Al0.73Sc0.27N: Improved Leakage and Polarity Control

Advanced Electronic Materials, EarlyView.
Left: Polarization hysteresis (P‐E) characteristics of 200 nm wurtzite‐type Al0.73Sc0.27N without (ref. Nmix = 0) and with O‐doping (Nmix = 8 and 15), showing a clear drop of leakage current with O‐doping. Right: Piezoresponse for microscopy showing the as‐deposited polarization reversal from nitrogen (Nmix = 0) to metal polarity (Nmix = 15) via mixed ...
Md Redwanul Islam, Niklas Wolff, Georg Schönweger, Tom‐Niklas Kreutzer, Margaret Brown, Maike Gremmel, Eric S. Ollanescu‐Orendi, Patrik Straňák, Lutz Kirste, Geoff L. Brennecka, Simon Fichtner, Lorenz Kienle   +11 more
wiley   +1 more source

Electroencephalography Spectral-power Volatility Predicts Problem-solving Outcomes. [PDF]

J Cogn Neurosci
Yu Y, Oh Y, Kounios J, Beeman M.
europepmc   +1 more source

Two‐Terminal MoS2‐Based Retinomorphic Devices with Enhanced Synaptic Plasticity

Advanced Electronic Materials, EarlyView.
The two‐terminal retinormorphic devices are demonstrated on the functionalized substrate through plasma treatment. The functionalized substrate serves recombination centers, which can control the decay dynamics of excited carriers. These make modulating synaptic plasticity possible in two‐terminal retinormorphic devices.
Younghoon Lim, Taehun Kim, Jaesik Eom, Onsik Harm, Junsung Byeon, Jungmoon Lim, Juwon Lee, Sangyeon Pak, SeungNam Cha   +8 more
wiley   +1 more source

Constructing stability: optimal learning in noisy ecological niches. [PDF]

Proc Biol Sci
Lee ED, Flack JC, Krakauer DC.
europepmc   +1 more source

Materials Selection Principles for Designing Electro‐Thermal Neurons

Advanced Electronic Materials, EarlyView.
Materials property – performance relations are established for new and old electrical materials leveraged as electro‐thermal oscillators emulating neuron dynamics. Robust, reconfigurable, high frequency, low power characteristics are explicitly tied to highly nonlinear electrical transport, small specific heat, and greater electrical than thermal ...
Fatme Jardali, Jenny L. Chong, Yeonju Yu, R. Stanley Williams, Suhas Kumar, Patrick J. Shamberger, Timothy D. Brown   +6 more
wiley   +1 more source

Ultrafast Luminescence Detection with Selective Adsorption of Carbon Disulfide in a Gold(I) Metal-Organic Framework. [PDF]

Angew Chem Int Ed Engl
Yoshino H, Saigo M, Ehara T, Miyata K, Onda K, Pirillo J, Hijikata Y, Takaishi S, Kosaka W, Otake KI, Kitagawa S, Miyasaka H.   +11 more
europepmc   +1 more source

Enhancing Ga─Sb Bonds by GaSb Co‐Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory

Advanced Electronic Materials, EarlyView.
This study reveals that GaSb co‐doping in Ge₂Sb₂Te₅ significantly mitigates unwanted Ga─Ge bonds, achieving an impressive 8 ns phase change speed and enhanced thermal stability up to 196 °C. First‐principles simulations and experimental characterizations demonstrate stable multilevel resistance, paving the way for advanced phase change memory in ...
Ke Gao, Ruizhe Zhao, Xin Li, Jingwei Cai, Hao Tong, Xiangshui Miao   +5 more
wiley   +1 more source

Charge Injection and Transport in an Isoindigo‐Based Polymer Transistor

Advanced Electronic Materials, EarlyView.
This study presents the charge injection and transport properties of field‐effect transistors based on an isoindigo‐bithiophene donor‐acceptor polymer semiconductor contacted with thiolated self‐assembled monolayer (SAM)‐functionalized electrodes. Temperature‐dependent contact characteristics are measured and simulated.
Zuchong Yang, Daniele Zucchelli, Melissa Berteau‐Rainville, Qi Wang, Sydney Mikulin, Ingo Salzmann, Steffen Duhm, Fabrizio Torricelli, Emanuele Orgiu   +8 more
wiley   +1 more source