Results 161 to 170 of about 33,734 (264)

Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors

Advanced Electronic Materials, EarlyView.
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang, Qingli Zhang, Yuting Liu, Binbin Liu, Zhiping Zheng, Guangda Niu, Ling Xu   +6 more
wiley   +1 more source

Multiple functional bulk passivator pyrimidine derivative stabilizing perovskite precursors for efficient carbon-based perovskite solar cells. [PDF]

Chem Sci
Geng M, Li J, Wang K, Jiang L, Lu D, Iqbal S, Gu Y, Chen L, Xu T.   +8 more
europepmc   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

An enhanced-performance multisensing progressive cellular μGC: design advances and blind test results. [PDF]

Microsyst Nanoeng
Winship D, Liao W, Lu HT, Lara-Ibeas I, Zhao X, Xu Q, Qian T, Gordenker R, Qin Y, Gianchandani YB.   +9 more
europepmc   +1 more source

Photoresponsive Rotaxanes Switch Lipid Bilayer Neuromorphic Behavior with Light

Advanced Electronic Materials, EarlyView.
A rotaxane consisting of a macrocycle ring with two azobenzene units mechanically interlocked onto an amphiphilic axle was incorporated into droplet interface bilayers (DIBs). Photoswitching between the azobenzene configurations on the ring resulted in cycling between memristive and memcapacitive behaviors in lipid bilayers, enabling programmable ...
P.T. Podar, U.N.K. Conthagamage, J. Katsaras, V. García‐López, C. P. Collier   +4 more
wiley   +1 more source

Development of a sodium alginate-silver/zinc oxide - cinnamaldehyde nanocomposite film for coating chicken meat and evaluation of meat safety. [PDF]

RSC Adv
Roy KAD, Desai SS, Abishad P, Krishnan R, Vinod VK, Sruthimol JJ, Kothakotta A, Barbuddhe SB, Rawool DB, Vergis J.   +9 more
europepmc   +1 more source

Atomic Layer Deposition of Disordered p‐Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P‐Channel SnO Thin‐Film Transistor Characteristics

Advanced Electronic Materials, EarlyView.
Disordered p‐type SnO thin‐films are deposited via atomic layer deposition using a novel heteroleptic precursor. These films enable low‐temperature fabrication of thin‐film transistors with excellent stability and mobility. Their potential compatibility with flexible substrates and integration with n‐type IGZO transistors makes them candidates for ...
Benjamin J. Peek, Kham Man Niang, Benjamin McMitchell, Heath Bagshaw, Karl Dawson, Adrian Gardner, Babak Bakhit, James D. Parish, Oliver W. S. Clark, Joe C. Goodall, Andrew Brookes, Satyajit Das, Feras Alkhalil, Andrew L. Johnson, Andrew J. Flewitt, Paul R. Chalker   +15 more
wiley   +1 more source

Implications of Pyrolytic Gas Dynamic Evolution on Dissolved Black Carbon Formed During Production of Biochar from Nitrogen-Rich Feedstock. [PDF]

Environ Sci Technol
Zhang X, Xu Z, Sun Y, Mohanty SK, Lei H, Khan E, Tsang DCW.   +6 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Stabilising CO₂ concentration as a channel for global disaster risk mitigation. [PDF]

Sci Rep
Lu S, Tambakis D.
europepmc   +1 more source