Results 41 to 50 of about 3,977,338 (275)

Generative Adversarial Networks for Inpainting Implied Volatility Surfaces

Mathematics
Implied volatility surfaces describe option-implied volatilities across strikes, and maturities and play a central role in derivative pricing and risk management.
Taonga Leeroy Maoneni, Hermann Azemtsa Donfack, Celestin Wafo Soh   +2 more
doaj   +1 more source

Support‐Controlled Reaction Pathways via Dynamic Sulfur‐Mediated Interfaces for Selective Urea Electrolysis

Advanced Functional Materials, EarlyView.
Sulfur‐doped graphitized carbon nanofibers act as adaptive catalyst–support platforms, enabling dynamic sulfur‐mediated reconstruction and strong metal–support interactions. This unique behavior enhances catalyst stability and controls reaction pathways, achieving highly selective urea oxidation (∼92% N2) coupled with efficient hydrogen evolution ...
Melanie Guillén‐Soler, Lucía Vizcaíno‐Anaya, Ahmad Tayyebi, José Manuel Vila‐Fungueiriño, María del Carmen Giménez‐López   +4 more
wiley   +1 more source

Bio‐Inspired Biopolymeric Implantable Platform for Localized and Sustained Drug Delivery in Solid Tumor Treatment

Advanced Functional Materials, EarlyView.
A bio‐inspired biopolymeric implantable drug delivery platform enables localized and sustained release of 7‐ethyl‐10‐hydroxycamptothecin (SN‐38) in solid tumor treatment. The three‐dimensional (3D) structured crosslinked‐chitosan implants are fabricated via 3D‐printed molds and provide drug release over 3 months, significantly inhibiting tumor growth ...
Mercedes Lozano‐Garcia, Constantine Vogiatzis, Alejandra Planells‐Devesa, Emre Dikici, Caroline Vieira Maluf, Vasudev Vivekanand Nayak, Paulo G. Coelho, Lukasz Witek, Alicia Bilbao, Daniel Bilbao, Prasoon Mohan, Sapna Deo, Sylvia Daunert   +12 more
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Degree of Irrationality: Sentiment and Implied Volatility Surface

CoRR
In this study, we constructed daily high-frequency sentiment data and used the VAR method to attempt to predict the next day's implied volatility surface. We utilized 630,000 text data entries from the East Money Stock Forum from 2014 to 2023 and employed deep learning methods such as BERT and LSTM to build daily market sentiment indicators.
Jiahao Weng, Yan Xie
openaire   +2 more sources

Ultrafast Thermal Shock Synthesis of CuNiSnLa Medium‐Entropy Metallic Glass for Sustainable Nitrogen Fixation via Plasma‐Coupled Electrocatalysis

Advanced Functional Materials, EarlyView.
This work introduces an ultrafast thermal shock strategy to synthesize a CuNiSnLa medium‐entropy metallic glass (MEMG). The rapid heating and cooling process generates a robust, highly active catalyst for electrocatalytic nitrate reduction to ammonia (NRA).
Hongbo Chen, Peng‐Jun Deng, Yang Liu, Shenglong Huang, Shuo Sun, Haoxuan Li, Jiajia Lu, Panagiotis Tsiakaras   +7 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Direct Integration of Conductive, Emissive Perovskite Nanocrystals Into Efficient Light‐Emitting Diodes Without Post‐Synthetic Ligand Exchange

Advanced Functional Materials, EarlyView.
We demonstrate the direct integration of CsPbBr3 perovskite nanocrystals (PNCs) into optoelectronic devices without post‐synthetic ligand exchange. This is achieved by synthesizing PNCs stabilized by strong‐binding‐energy oleylammonium–bromide pairs instead of oleate ligands. The resultant low ligand density and minimized surface defects enhance charge
Jigeon Kim, Yubin Lee, Gyeong Eun Seok, Dong Gyu Lee, Seongwon Lee, Huieun Kim, Sung Woo Jang, Wooyeon Kim, Wondo Choi, Woo Hyeon Jeong, Donghun Lee, Min Jae Ko, Won Bin Im, Jinhan Cho, Tae Kyung Lee, Bo Ram Lee, Younghoon Kim   +16 more
wiley   +1 more source

Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors

Advanced Functional Materials, EarlyView.
A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim, Ting‐Ching Chu, Zhehao Zhu, Lincoln J. Lauhon   +3 more
wiley   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

Advanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj, Sandeep Sugathan, Jiyoung Kim, Si Joon Kim, Pil‐Ryung Cha   +4 more
wiley   +1 more source