Results 201 to 210 of about 338,677 (296)
Advanced Functional Materials, EarlyView.In this work, Bi2Te3 is integrated into a 3D‐printed nanocarbon electrode for NH4+ storage. A rocking‐chair battery with CuHCF as the cathode delivers a high energy density of 134.8 Wh kg−1 and a power density of 1800 W kg−1. The design allows easy recovery of carbon additives, promoting sustainability and recyclability in next‐generation aqueous ...
Sunny Nandi, Martin Pumera
wiley +1 more source
Study on the Recrystallization Diagram of High Purity Aluminium (2nd Report). Effect of Impurity
, 1953 Yuzo NAKAMURA, Motoi Nishizaka
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Errata: “Impurity Distribution in Epitaxial Silicon Films” [J. Electrochem. Soc., 109, 1059 (1962)] [PDF]
, 1963 Candice Thomas, D. Kahng, R. C. Manz
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Advanced Functional Materials, EarlyView.This study evaluates the scalability of PQD GNC‐based LSCs for BIPV applications. Experimental data and Monte Carlo simulations predict performance up to 1 m2, achieving a peak power conversion efficiency of 3.17%. The results confirm the viability of these LSCs for energy‐efficient building applications.
Emre İlter +6 more
wiley +1 more source
Atmospheric Doping of Stretchable Polymer Semiconductors for Skin Electronics
Advanced Functional Materials, EarlyView.An atmospheric doping system using oxygen molecules in air as dopants is introduced for stretchable polymer semiconductors. The chemisorbed oxygen molecules act as acceptor, lead to increase not only the hole concentration of the semiconductor film over two orders of magnitude (3.37 × 1017 cm−3) but also electrical properties of the field‐effect ...
Min Woo Jeong +7 more
wiley +1 more source
Effect of Temperature of Water in an Acetylene Generator on the Yield of Gaseous Impurities
, 1949 I. Ônishi, Masayasu. Mizuno
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Electron scattering on magnetic impurities in metals and anomalous resistivity effects [PDF]
, 1965 А. А. Абрикосов
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Advanced Functional Materials, EarlyView.Herein, the synthesis of Ta₂Pd₃S₈ nanowires is reported via scalable liquid cascade exfoliation and their integration into high‐mobility field‐effect transistors (FETs) and sensitive photodetectors, achieving carrier mobility of up to 27.3 cm2 V⁻¹ s⁻¹ and responsivities of 322.40 A W⁻¹ and 1.85 mA W⁻¹ for single nanowire and network devices ...
Kyung Hwan Choi +13 more
wiley +1 more source
INFLUENCES OF IMPURITIES ON THE RING CRUSHING VALUES ETC. OF THE BALL-BEARING STEEL
, 1954 Kiyoji Deguchi
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Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS Structure [PDF]
, 1965 B. E. Deal +3 more
openalex +1 more source