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The mechanisms of impurity–impurity and impurity–matrix interactions in B/N-doped graphene
Chemical Physics Letters, 2014Abstract Using DFT calculations, we investigate mechanisms of the impurity–impurity and impurity–matrix interactions in B/N-doped graphene. Our results have revealed that the impurities interact with each other through the long-range screened Coulomb interaction, and the impurity–matrix interaction is understood from the orbital hybridization.
Penglai Gong+7 more
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Physics Letters A, 1973
Abstract The pseudopotential approach for the study of a vacancy used by Harrison was developed to a more general form. Useful expressions, such as impurity-impurity interactions were obtained.
Masao Doyama+5 more
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Abstract The pseudopotential approach for the study of a vacancy used by Harrison was developed to a more general form. Useful expressions, such as impurity-impurity interactions were obtained.
Masao Doyama+5 more
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1968
At the present time new processes requiring pure chemical compounds are being widely introduced into industry. The detection of impurities in chemicals for and from industry has become the most important application of analytical chemistry [1]. Gas chromatography is a popular tool in these analyses, giving in a single experiment the concentrations of ...
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At the present time new processes requiring pure chemical compounds are being widely introduced into industry. The detection of impurities in chemicals for and from industry has become the most important application of analytical chemistry [1]. Gas chromatography is a popular tool in these analyses, giving in a single experiment the concentrations of ...
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Physica B: Condensed Matter, 2009
Abstract Transitions via impurities, in addition to transitions from the valence band to the conduction band in semiconductors increase the generation of electron–hole pairs. These transitions lead to alterations in the electronic density around the impurities, and as a consequence, to modifications in the forces on the impurities.
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Abstract Transitions via impurities, in addition to transitions from the valence band to the conduction band in semiconductors increase the generation of electron–hole pairs. These transitions lead to alterations in the electronic density around the impurities, and as a consequence, to modifications in the forces on the impurities.
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2017
This opening chapter will contextualise the ‘Duvivier style’. It will look at his chief formative influence, André Antoine, whose influential theories on cinematic naturalism, location shooting, and performance authenticity was cultivated and developed by Duvivier throughout his career. The chapter will examine what makes a Duvivier film.
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This opening chapter will contextualise the ‘Duvivier style’. It will look at his chief formative influence, André Antoine, whose influential theories on cinematic naturalism, location shooting, and performance authenticity was cultivated and developed by Duvivier throughout his career. The chapter will examine what makes a Duvivier film.
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1995
Since the early 1960s gettering has been a common method to reduce unintentional metal impurities in the electrically-active zones of semiconductor devices. Starting with the extrinsic gettering by means of phosphorus diffusion [8.1] various alternative methods were developed; mostly by applying a trial-and-error technique.
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Since the early 1960s gettering has been a common method to reduce unintentional metal impurities in the electrically-active zones of semiconductor devices. Starting with the extrinsic gettering by means of phosphorus diffusion [8.1] various alternative methods were developed; mostly by applying a trial-and-error technique.
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Impurity Diffusion: Impurity Diffusion in Aluminum
Solid State Phenomena, 2002C. Tuijn, Gerhard Neumann
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Impurity Diffusion: Impurity Diffusion in Lead
Solid State Phenomena, 2002Gerhard Neumann, C. Tuijn
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