Results 21 to 30 of about 241,825 (343)

Observation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator [PDF]

open access: yes, 2016
The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved.
Balakrishnan, G.   +12 more
core   +4 more sources

Le gisement à étain–cuivre–indium de Charrier (Allier) : un skarnoïde viséen (340 Ma) traceur de la métallogenèse varisque du nord Massif central

open access: yesBSGF - Earth Sciences Bulletin, 2022
Charrier est un petit gisement de cuivre–étain riche en indium de type skarnoïde du Forez (nord du Massif central). Il est encaissé dans une série volcanosédimentaire du Dévono-dinantien au contact du granite viséen des Bois-noirs. Sa genèse comprend une
Marcoux Éric   +2 more
doaj   +1 more source

FMC2 model based perception grading for dark insurgent network analysis [PDF]

open access: yesPeerJ Computer Science, 2023
The burgeoning role of social network analysis (SNA) in various fields raises complex challenges, particularly in the analysis of dark and dim networks involved in illicit activities.
Ganesh Kumar Pugalendhi   +2 more
doaj   +2 more sources

Wetting and anisotropy of interfacial energy on the contact boundary of indium nanocryctals and orientied substrate [PDF]

open access: yesФизико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2018
We propose a technique for estimating the wetting and anisotropy of the interfacial energy at the interface between the metal particles (indium) with a substrate based on the construction of the Winterbottom equilibrium shape of the crystal.
L.P. Aref`eva, I.G. Shebzukhova
doaj   +1 more source

Electrochemical Mechanism of the Preparation of High-Purity Indium by Electrodeposition

open access: yesFrontiers in Chemistry, 2022
Indium is a crucial material and is widely used in high-tech industries, and electrodeposition is an efficient method to recover rare metal resources. In this work, the electrochemical behavior of In3+ was investigated by using different electrochemical ...
Zhongmin Hou   +6 more
doaj   +1 more source

High-repetition-rate combustion thermometry with two-line atomic fluorescence excited by diode lasers [PDF]

open access: yes, 2009
We report on kilohertz-repetition-rate flame temperature measurements performed using blue diode lasers. Two-line atomic fluorescence was performed by using diode lasers emitting at around 410 and 451 nm to probe seeded atomic indium.
Burns   +13 more
core   +1 more source

Electrodeposition of Indium on Glassy Carbon from Tetrabutylammonium Chloride Containing Solutions

open access: yesEurasian Chemico-Technological Journal, 2019
The effectiveness of tetrabutylammonium chloride (TBACh) as inhibition additive of dendritic growth of indium has been investigated by means of cyclic voltammetry and chronoamperometry methods.
K. Avchukir   +2 more
doaj   +1 more source

Kinetics of electronic spectra of surface of india with adsorbed oxygen [PDF]

open access: yesФизико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2018
The spectra of Auger and plasmon losses of polycrystalline indium before and after aging in an oxygen medium have been studied. The kinetics of electronic states on the surface of indium with adsorbed layers of oxygen (exposure in an oxygen medium up to ...
M.A. Aleroev   +2 more
doaj   +1 more source

Urea Gel Electrophoresis in Studies of Conformational Changes of Transferrin on Binding and Transport of Non-Ferric Metal Ions

open access: yesGels, 2021
Transferrin (Tf) is a crucial transporter protein for Fe(III), but its biological role in binding other metal ions and their delivery into cells remain highly controversial.
Aviva Levina, Boer Wang, Peter A. Lay
doaj   +1 more source

Indium Nitride and Indium Gallium Nitride layers grown on nanorods [PDF]

open access: yes, 2013
Molecular beam epitaxy has been used to grow InN layers on both Si and SiCsubstrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array.
Cherns, David   +6 more
core   +2 more sources

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