Results 61 to 70 of about 8,754 (215)
Monolithic Integrated Chip With SOA and Tunable DI for Multichannel All-Optical Signal Processing
An indium phosphide-based monolithic integrated chip with semiconductor optical amplifiers and a tunable delay interferometer (DI) is developed. Because of the comb filtering characteristics of DI, this chip has the potential to be used for multichannel ...
Zhuyang Huang +4 more
doaj +1 more source
Multi‐Energy‐Driven Photocatalysis: Mechanism, Progress, and Perspective
Photocatalysis technology can be utilized in water splitting, carbon dioxide reduction, pollutant degradation, and chemical synthesis. Introducing external energy fields, including thermal energy, electrical energy, magnetic energy, mechanical energy, and microwave energy, has been considered as a promising method to improve photocatalytic performance ...
Liangcheng Xu +5 more
wiley +1 more source
Vertically Emitting Indium Phosphide Nanowire Lasers [PDF]
Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW lasers currently exhibit poor directionality and high threshold gain, issues critically limiting their prospects for on-chip light sources with extremely reduced footprint and efficient power ...
Xu, Wei-Zong +14 more
openaire +4 more sources
Phase synchronization dynamics of a mutually coupled laser system for quantum random number generation [PDF]
We performed an experimental and numerical study of an Indium Phosphide photonic integrated circuit designed for quantum random number generation.
Martínez-Pàmias Berta +2 more
doaj +1 more source
A lot of subtle but key tricks in the synthesis of (DMA)3P‐based InP QDs and device mechanisms were not explicitly explained in the published works. This review firstly provides a comprehensive analysis of the molecular structures and distinct reaction mechanisms of (TMS)3P and (DMA)3P during InP core nucleation.
Zifeng Zhang +8 more
wiley +1 more source
Equilibria in the transport epitaxial formation of indium phosphide and arsenide
From the data available in literature, equilibria were calculated of the reactions which come into consideration in the preparation of indium phosphide and indium arsenide.
Čestmír Černý +5 more
core +1 more source
To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM) structures of molybdenum (Mo) were fabricated on indium phosphide (InP) substrate on the top of an indium gallium arsenide (InGaAs) layer grown by molecular
Florent Ravaux +2 more
doaj +1 more source
Emerging MBenes for Energy Technologies
ABSTRACT The escalating global demand for sustainable energy is driving the search for transformative materials that transcend the limitations of conventional systems. Two‐dimensional (2D) transition metal borides (MBenes) have recently emerged as a compelling class, distinguished by unique electronic structures, tunable surface chemistry, and ...
Yingrui Ding +5 more
wiley +1 more source
The two-photon absorption (TPA) coefficient is measured in indium phosphide (InP) using femtosecond pulses to be 45cm/GW at 1.32μm. Nanosecond pulses are subsequently used to find the free-carrier refractive index cross-section, σ_r, and the free-carrier
Sloanes, Trefor J.
core
Clusters have been identified as important growth intermediates during group III–V quantum dot (QD) formation. Here we report a one-solvent protocol that integrates synthesis, purification, and mass characterization of indium phosphide (InP) QD growth ...
Yi Shen (152956) +10 more
core +1 more source

