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Functionalization of Indium Tin Oxide
Langmuir, 2006The preparation and functionalization of ITO surfaces has been studied using primarily X-ray photoemission spectroscopy and infrared reflection-absorption spectroscopy (IRRAS) and the reagents n-hexylamine and n-octyltrimethoxysilane (OTMS). Particular attention has been paid to characterization of the surfaces both before and after functionalization ...
Victor M, Bermudez +3 more
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Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition
Current Applied Physics, 2012Indium oxide, tin oxide and indium tin oxide nanowires have been grown by vapor deposition on Si and quartz substrates. Under the growth conditions used, pure SiOx nanowires, a mixture of SiOx and indium oxide, tin oxide or indium tin oxide nanostructures, or pure indium oxide, tin oxide or indium tin oxide nanostructures could be obtained at different
Chan, WK +6 more
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Mn-implanted, polycrystalline indium tin oxide and indium oxide films
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2009Abstract Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum.
Scarlat, C. +8 more
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Multicomponent Patterning of Indium Tin Oxide
ACS Applied Materials & Interfaces, 2012We report a versatile functionalization and pattering technique that permits multicomponent pattern-specific modification of indium tin oxide (ITO) with organic species. The method relies on a bilayered molecular system that simultaneously protects ITO from degradation and provides uniform chemical functionality suitable for further elaboration ...
Carleen M, Bowers +3 more
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Electroluminescence emission from indium oxide and indium-tin-oxide
Journal of Applied Physics, 1985Electroluminescence emission from indium-tin-oxide (ITO) and indium oxide films incorporated in a Si-rich SiO2-SiO2-ITO (In2O3) multiple-layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In2O3. The intensity of the light is found to depend on the applied electric field.
C. Falcony +4 more
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Sintering of tin-doped indium oxide (Indium-Tin-Oxide, ITO) with Bi2O3 additive
Journal of Materials Science, 1998Tin-doped indium oxide (Indium-Tin-Oxide, ITO) is known as a poorly sinterable material. Densification of ITO powders with relatively large particle size (1–2 μm) was enhanced remarkably by the additive (Bi2O3) whose melting point is lower than the sintering temperature.
M. MURAOKA +3 more
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Thin Solid Films, 1992
Abstract The electrical conduction mechanism for the indium tin oxide (ITO)/polypyrrole (PPy)/ITO sandwich type of metal-insulator-metal element was investigated, where electroinactive PPy polymerized in aqueous NaOH solution was used as an insulator.
Tetsuya Osaka +3 more
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Abstract The electrical conduction mechanism for the indium tin oxide (ITO)/polypyrrole (PPy)/ITO sandwich type of metal-insulator-metal element was investigated, where electroinactive PPy polymerized in aqueous NaOH solution was used as an insulator.
Tetsuya Osaka +3 more
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Sputtering of indium-tin oxide
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997Abstract In this paper we have brought together investigations by ourselves of the sputtering of thin films of Indium-Tin Oxide (ITO), onto substrates which are at ambient temperature, in which we sought to produce films with the highest electrical conductivity and visible transparancy.
R.P. Howson +3 more
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IEEE Microwave and Wireless Components Letters, 2008
This letter reports for the first time the interesting behavior of the interface between indium tin oxide (ITO) as a high resistive electrode and barium strontium titanate tunable paraelectric thin film material. The interface is consisting of barium strontium titanate (BST) thin film dielectric material sandwiched between two ITO high resistive layers,
M. Al Ahmad +4 more
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This letter reports for the first time the interesting behavior of the interface between indium tin oxide (ITO) as a high resistive electrode and barium strontium titanate tunable paraelectric thin film material. The interface is consisting of barium strontium titanate (BST) thin film dielectric material sandwiched between two ITO high resistive layers,
M. Al Ahmad +4 more
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Stability of some Indium-tin oxide coatings
Applied Optics, 1984Un processus de depot de couches minces d'oxyde d'indium et d'etain en trois etapes a ete recemment rapporte. (Assadourian-Herczeg, Appl. Opt. 23, 1452 (1984)).
L, Assadourian, L S, Herozeg
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