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The toxicology of indium tin oxide
Environmental Toxicology and Pharmacology, 2016Indium tin oxide (ITO) is a technologically important semiconductor. An increasing number of cases of severe lung effects (characterized by pulmonary alveolar proteinosis and/or interstitial fibrosis) in ITO-exposed workers warrants a review of the toxicological hazards.
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Optoelectric biosensor using indium-tin-oxide electrodes
Optics Letters, 2007The use of an optically thin indium-tin-oxide (ITO) electrode is presented for an optoelectric biosensor simultaneously recording optical images and microimpedance to examine time-dependent cellular growth. The transmittance of a 100 nm thick ITO electrode layer is approximately the same as the transmittance of a clean glass substrate, whereas the ...
Chang Kyoung, Choi +2 more
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SPIE Proceedings, 2011
Nanostructures of the tin oxide, indium oxide and tin-doped indium oxide have been fabricated on silicon by chemical vapor deposition from a mixture of metal oxide nanoparticles and single-wall carbon nanotubes (SWCNT). Different ratios of the metal oxide to SWCNT have been used.
Djurišić, AB +6 more
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Nanostructures of the tin oxide, indium oxide and tin-doped indium oxide have been fabricated on silicon by chemical vapor deposition from a mixture of metal oxide nanoparticles and single-wall carbon nanotubes (SWCNT). Different ratios of the metal oxide to SWCNT have been used.
Djurišić, AB +6 more
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Characterization of Indium Tin Oxide and Reactive Ion Etched Indium Tin Oxide Surfaces
Japanese Journal of Applied Physics, 1990ITO films, both before and after annealing, were characterized with various methods. The changes in film characteristics are discussed. RIE etching mechanisms for the unannealed ITO films in three reactive gases (CF2Cl2, CF3Cl, and CF4) and two diluent gases (N2 and Ar) were delineated by analyzing and comparing the surface ESCA data with the ...
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ACS Nano, 2012
Indium tin oxide (ITO) nanopatterned electrodes are prepared from colloidal solutions as a material saving alternative to the industrial vapor phase deposition and top down processing. For that purpose highly monodisperse In(1-x)Sn(x) (x < 0.1) colloidal nanocrystals (NCs) are synthesized with accurate size and composition control.
Yarema, M. +11 more
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Indium tin oxide (ITO) nanopatterned electrodes are prepared from colloidal solutions as a material saving alternative to the industrial vapor phase deposition and top down processing. For that purpose highly monodisperse In(1-x)Sn(x) (x < 0.1) colloidal nanocrystals (NCs) are synthesized with accurate size and composition control.
Yarema, M. +11 more
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Indium Tin Oxide Nanorod Electrodes for Polymer Photovoltaics
ACS Applied Materials & Interfaces, 2011We have deposited indium tin oxide (ITO) nanorods on glass and glass/ITO substrates by DC sputtering and by e-beam deposition. The properties of the nanorods deposited by different methods and on different substrates have been investigated. The ITO nanorods were also used as an electrode in bulk heterojunction polymer solar cells.
Sun, YC +6 more
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Electrochimica Acta, 2013
Abstract Generator–collector electroanalysis approaching the nanomolar level is demonstrated for the reduction of Ru(NH 3 ) 6 3+ in aqueous (NH 4 ) 2 SO 4 (saturated, as a naturally low-oxygen electrolyte medium) and at tin-doped indium oxide (ITO) electrodes. ITO–ITO double band and double plate geometries are compared.
Sara E.C. Dale +2 more
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Abstract Generator–collector electroanalysis approaching the nanomolar level is demonstrated for the reduction of Ru(NH 3 ) 6 3+ in aqueous (NH 4 ) 2 SO 4 (saturated, as a naturally low-oxygen electrolyte medium) and at tin-doped indium oxide (ITO) electrodes. ITO–ITO double band and double plate geometries are compared.
Sara E.C. Dale +2 more
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Characterization of indium tin oxide films
Surface and Coatings Technology, 1988Abstract Indium tin oxide (ITO) films have been prepared by sequential deposition of indium and tin followed by oxidation at different temperatures in the range 500–650 °C in atmospheric oxygen. The amount of indium deposited was maintained constant throughout and only the concentration of the tin dopant was varied in the range 0.05–0.4% by weight ...
K.R. Murali +5 more
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Indium tin oxide/Cu2O photovoltaic cells
Thin Solid Films, 1983Abstract Tin-doped (about 3%) indium oxide films 80 nm thick were deposited by magnetron sputtering and were found to form a barrier on Cu2O crystals of comparable or superior quality to that of copper. The indium tin oxide (ITO) layers have good optical transmissions (more than 85%) and high electrical conductivities (approximately 3×10 3 ...
W.M. Sears, E. Fortin, J.B. Webb
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Mesoporous indium tin oxide (ITO) films
Thin Solid Films, 2006Abstract We have developed a route to mesostructured indium tin oxide (ITO) films. The films, with the In/Sn atomic ratio of 9:1, were prepared using cetyltrimethylammonium (CTAB) as templating agent. Substrates of silicon and quartz and borosilicate glasses were spin-coated with an ethanol–CTAB solution of indium and tin chlorides, followed by heat ...
Annika Pohl, Bruce Dunn
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