Results 321 to 330 of about 81,418 (355)
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High efficiency indium tin oxide/indium phosphide solar cells
Applied Physics Letters, 1985Solar cells have been fabricated by rf sputter depositing indium tin oxide onto single crystal p-type indium phosphide. Four different substrate doping densities have been used but in all cases the dopant was zinc and the wafers were 〈100〉 oriented. The optimum doping density from the range studied was 3×1016 cm−3 and devices based on such substrates ...
T. J. Coutts, S. Naseem
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Journal of Applied Physics, 1979
The preparation of indium-tin-oxide (ITO)/p-InP and ITO/p-GaAs solar cells via ion-beam deposition, rf sputtering, and magnetron sputtering of ITO onto single-crystal InP and GaAs substrates is described. The properties of these solar cells are strongly affected by the fabrication conditions and are related to chemical modifications of the junctions ...
K. J. Bachmann +8 more
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The preparation of indium-tin-oxide (ITO)/p-InP and ITO/p-GaAs solar cells via ion-beam deposition, rf sputtering, and magnetron sputtering of ITO onto single-crystal InP and GaAs substrates is described. The properties of these solar cells are strongly affected by the fabrication conditions and are related to chemical modifications of the junctions ...
K. J. Bachmann +8 more
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Interfacial properties of indium tin oxide/indium phosphide devices
Applied Physics Letters, 1982Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated by ion beam deposition. In this letter, a critical evaluation of the ITO/InP interface is presented using complementary capacitance-voltage and ion microprobe measurements. We have found that deposition of ITO produces a semi-insulating region at the InP surface.
P. Sheldon +3 more
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Infrared Plasmonics with Indium–Tin-Oxide Nanorod Arrays
ACS Nano, 2011This article reports the study of infrared plasmonics with both random and periodic arrays of indium-tin-oxide (ITO) nanorods (NR). A description is given on the synthesis, patterning, and characterization of physical properties of the ITO NR arrays. A classical scattering model, along with a 3-D finite-element-method and a 3-D finite-difference-time ...
Shi Qiang, Li +7 more
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High-efficiency indium tin oxide/indium phosphide solar cells
Applied Physics Letters, 1989Improvements in the performance of indium tin oxide/indium phosphide (ITO/InP) solar cells have been achieved by using dc magnetron sputter deposited n-ITO onto an epitaxial p/p+ structure grown on good quality commercial p+ bulk substrates. The composition of the sputtering gas has been investigated and the highest efficiency cells resulted when the ...
X. Li +4 more
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Surface Modification of Indium Tin Oxide with Ni-doped Indium Tin Oxide Coated by Pyrosol Process
Japanese Journal of Applied Physics, 2006Indium tin oxide (ITO) is the most popular anode material of organic light-emitting diodes (OLEDs). To improve the performance of OLEDs, we coated ITO anodes prepared by a pyrosol process with Ni-doped ITO also using the pyrosol process. The pyrosol process, pyrolysis of an aerosol of source materials at atmospheric pressure, is a simple method of ...
Mami Adachi +5 more
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Preparation of indium tin oxide powder from low-grade metallic indium and tin
Korean Journal of Chemical Engineering, 2016Preparation of indium-tin oxide(ITO) powder by oxalic acid from metallic indium and tin was investigated. The intermediate(indium-tin oxalate salt) was formerly prepared at various conditions, and thermal decomposition was followed to obtain ITO powder for ITO target. Optimum conditions for preparation of the intermediate were oxalic acid concentration
Su-Jin Koo, Chang-sik Ju
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Indium tin oxide/(n+-p) silicon solar cell
Solar Cells, 1985Abstract The solar cell structure consists of a shallow n+-p junction prepared on a p-type silicon substrate using phosphorus diffusion at a temperature of 800 °C. A conductive layer of indium tin oxide is then deposited by spray pyrolysis. Both polycrystalline and monocrystalline silicon have been used.
Chaoui, A. +2 more
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991
High density ITO (indium–tin oxide) targets doped with Al2O3 and SiO2 manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen–argon gas mixture and annealing in forming gas, resulted in ITO films exhibiting 90% transmission at 550 nm and a ...
Sudhakar Kulkarni, Michel Bayard
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High density ITO (indium–tin oxide) targets doped with Al2O3 and SiO2 manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen–argon gas mixture and annealing in forming gas, resulted in ITO films exhibiting 90% transmission at 550 nm and a ...
Sudhakar Kulkarni, Michel Bayard
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Etching methods for indium oxide/tin oxide films
Thin Solid Films, 1976Abstract Methods are described for etching patterns in conducting indium-tin oxide films on glass substrates. For patterns requiring maximum definition and resolution hydriodic acid is preferred, whereas hydrofluoric acid or zinc and hydrochloric acid are useful for other purposes.
G. Bradshaw, A.J. Hughes
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