Results 251 to 260 of about 1,519,224 (329)

Effect of bending on microstructure and transport properties of filamentized high-temperature superconductor tapes manufactured by low-cost industrial process

open access: diamond
R. Ries   +13 more
openalex   +1 more source

Thermo‐Mechanically Recyclable Smart Textiles from Circularly Knitted Liquid Crystal Elastomer Fibers

open access: yesAdvanced Functional Materials, EarlyView.
Reprogrammable multi‐material smart textiles knitted from liquid crystal elastomer fibers undergo 2D and 3D deformation under thermal and photo stimuli. Circularly knitted tubular structures reversibly contract in radial and axial directions, enabling autonomous climbing, liquid release, and micro pumping.
Xue Wan   +8 more
wiley   +1 more source

Dynamic Bonds Enable Repair and Reprocessing of Glycol‐Modified PET

open access: yesAdvanced Functional Materials, EarlyView.
Dynamic hindered urea bonds enable rapid healing in glycol‐modified PET‐based polyurethanes. Tuning the hindered‐amine content allows these polymers to balance mechanical integrity with fast repair, achieving complete scratch disappearance in 30 s at 130°C.
Chaninya Mak‐iad   +3 more
wiley   +1 more source

Triblock Polymer Engineering Enables Hydration‐Rich, High‐Performance, Fouling‐Resistant Interfaces

open access: yesAdvanced Functional Materials, EarlyView.
A molecularly engineered triblock polymer (PHZ) rapidly reorganizes into a hydration‐rich interfacial layer on diverse surfaces, strongly suppressing hydrophobic attraction and fouling. The triblock polymer provides robust energy and steric barriers to oily foulants, enabling high‐performance antifouling at ultralow dosage.
Chenyu Qiao   +6 more
wiley   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon   +6 more
wiley   +1 more source

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