Fluctuations of the occupation times for branching system starting from infinitely divisible point processes [PDF]
Piotr Miłoś
openalex +1 more source
Paradox of the Sub-Plankton: Plausible Mechanisms and Open Problems Underlying Strain-Level Diversity in Microbial Communities. [PDF]
Goyal A, Chure G.
europepmc +1 more source
Dorsal Raphe VIP Neurons Are Critical for Survival‐Oriented Vigilance
DRNVIP neurons in mice and primates are strategically positioned to influence the central extended amygdala via feedback loops. They regulate the excitability of PKC‐δ neurons in the ovBNST and CeA through glutamate release. Their ablation heightens activity in these regions, disrupts active‐phase sleep architecture, enhances risk assessment behaviors ...
Adriane Guillaumin +15 more
wiley +1 more source
Investigating the ecological fallacy through sampling distributions constructed from finite populations. [PDF]
Torres DJ, Rouson D.
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On Voronoi Diagrams on the Information-Geometric Cauchy Manifolds. [PDF]
Nielsen F.
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Composites made of semiconducting carbon nanotubes and p‐type polymers, when adequately doped with molecular dopants, can exhibit highly delocalized charge carrier transport, showing high thermoelectric performances. The efficient charge delocalization is enabled by the reduced coulombic binding energy at high carrier concentration and the small ...
Ye Liu +7 more
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Isotropic random fields with infinitely divisible marginal distributions
Fangfang Wang +2 more
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Two hypotheses on the exponential class in the class of $O$-subexponential infinitely divisible distributions [PDF]
Toshiro Watanabe
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Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim +4 more
wiley +1 more source
Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang +6 more
wiley +1 more source

