Results 151 to 160 of about 46,567 (259)

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

open access: yesAdvanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe   +11 more
wiley   +1 more source

Ecosystem technology (ecotech): Harnessing natural processes to address global challenges. [PDF]

open access: yesSci Adv
Silliman BR   +41 more
europepmc   +1 more source

Advancing Fruit Bioimpedance Monitoring With Sustainable, Soft, And Bio‐Based Electrodes Beyond ECG

open access: yesAdvanced Electronic Materials, EarlyView.
Electrical impedance spectroscopy enables non‐destructive fruit quality monitoring, but conventional ECG and needle electrodes compromise signal stability, fruit physiology, and sustainability. This perspective highlights the transition toward soft, biocompatible, and biodegradable electrode interfaces based on natural substrates, bio‐derived ...
Sundus Riaz   +6 more
wiley   +1 more source

Legacies of foundation species shape life after death. [PDF]

open access: yesSci Adv
Kopecky KL   +12 more
europepmc   +1 more source

Fully Recyclable Printed Magnetoresistive Sensors Covering Broad Operational Ranges for Sustainable Interactive Electronics

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a sustainable printing and recycling strategy for magnetic sensors designed for IoT applications. By combining solvent‐orthogonal binders with tailored magnetic fillers, the sensors achieve tunable sensitivity across low to high magnetic field ranges.
Rui Xu   +6 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

open access: yesAdvanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini   +9 more
wiley   +1 more source

Wetting‐Driven Transfer of Flexible Ultra‐Thin Temperature Sensors

open access: yesAdvanced Electronic Materials, EarlyView.
A wetting‐driven transfer approach enables ultra‐thin temperature sensors to be transferred from a super‐hydrophilic donor substrate onto rigid, curved, and biological receiver substrates. By combining controlled wetting with a conformal Parylene carrier layer, the method preserves stable thermal sensing performance while expanding the integration of ...
Hafiza Faiqa Maqsood   +5 more
wiley   +1 more source

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