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Design of the Microstrip Bandstop Filter With High Insertion Loss

IEEE Transactions on Components, Packaging, and Manufacturing Technology, 2019
A novel planar bandstop filter with high insertion loss is proposed. With the assistance of coupled lines with open stubs at the input and output ports, the newly proposed structure is different from the conventional bandstop filter.
Cheng-Han Wu   +2 more
semanticscholar   +1 more source

Low Insertion Loss D-band SPDT Switches Using Reverse and Forward Saturated SiGe HBTs

IEEE Radio and Wireless Symposium, 2019
This paper presents two D-band SPDTs utilizing forward and reverse saturated SiGe HBTs. The SPDT switch designs are based on quarter-wave double shunt topology and state-of-the-art performance are achieved at D-band frequencies from 110 to 170GHz ...
A. Karakuzulu   +2 more
semanticscholar   +1 more source

Rescuing the “Loss-Of-Agency” Account of Thought Insertion

Philosophy, Psychiatry, & Psychology, 2015
Abstract: According to an influential view, a thought is pathologically ‘inserted’ when it is not voluntarily caused by the subject, that is, when the subject has not formed it qua agent. Recently, Lisa Bortolotti found this account unsatisfactory: most of our ordinary thoughts are not voluntarily produced by us, and yet they are not regarded as ...
openaire   +3 more sources

Monolithic On-chip Magneto-optical Isolator with 3 dB Insertion Loss and 40 dB Isolation Ratio

ACS Photonics, 2018
On-chip optical isolators constitute an essential building block for photonic integrated circuits (PICs). Here, we experimentally demonstrated a magneto-optical isolator monolithically integrated on silicon featuring 3 dB insertion loss and 40 dB ...
Qing-Yang Du   +12 more
semanticscholar   +1 more source

Ka-Band CMOS 360° Reflective-Type Phase Shifter with ±0.2 dB Insertion Loss Variation Using Triple-Resonating Load and Dual-Voltage Control Techniques

Radio Frequency Integrated Circuits Symposium, 2018
This paper demonstrates the design of a Ka-band 360° reflective-type phase shifter (RTPS). Triple-resonating load technique is used to reach broadband full 360° phase-shift range and achieve low insertion loss variation.
Peng Gu, Di-Xian Zhao
semanticscholar   +1 more source

Instrumentation of the Loss-of-Resistance Technique for Epidural Needle Insertion

IEEE Transactions on Biomedical Engineering, 2009
Epidural anesthesia is the most common form of anesthesia in obstetrics. The loss-of-resistance to saline injection is used to confirm when the needle tip enters the epidural space. This procedure is highly dependent on skill and expertise, so it is useful to quantify the tissue resistance during insertion.
Denis Tran   +4 more
openaire   +3 more sources

D-Band 360° Phase Shifter with Uniform Insertion Loss

Intelligent Memory Systems, 2018
Ahstract- This paper presents a D-Band phase shifter for 120 GHz phased array transceivers, implemented in 120 nm SiGe BiC-M OS process $(\mathbf{f}_{\mathbf{T}}/\mathbf{f}_{\mathbf{max}}=\mathbf{260}/\mathbf{340\ GHz})$.
Roee Ben Yishay, D. Elad
semanticscholar   +1 more source

The multilayered triplexer with low insertion loss

2006 Asia-Pacific Microwave Conference, 2006
A novel triplexer is proposed in this paper. This triplexer is not only employ the multilayered structure to miniaturize the size of the circuit, but also involve the transmission zeros to improve its performance. The design example is also provided in this paper.
null Ching-Wen Tang   +5 more
openaire   +1 more source

S0-Mode Lithium Niobate Acoustic Delay Lines with 1 dB Insertion Loss

IUS, 2018
This paper demonstrates low-loss acoustic delay lines based on the fundamental symmetrical (S0)mode in lithium niobate thin films for the first time. The demonstrated devices harness the high electromechanical coupling, low loss, and fast phase velocity ...
R. Lu   +3 more
semanticscholar   +1 more source

28 GHz 1.8 dB Insertion Loss SPDT Switch with 24 dB Isolation in 65 nm CMOS

European Microwave Conference, 2018
28 GHz SPDT switch has been designed and fabricated in 65 nm CMOS with deep N-well as a building block for beamforming-based 5th generation mobile communication systems.
Seunghyun Jang   +5 more
semanticscholar   +1 more source

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