Results 161 to 170 of about 2,204 (218)

The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling

IEEE Transactions on Electron Devices, 2010
In this paper, we present a detailed analysis and optimization of the superjunction (SJ) insulated gate bipolar transistor (IGBT). The SJ IGBT is a new device that breaks the IGBT limits, i.e., it delivers performance that is dramatically better. More specifically, we demonstrate here that the optimized SJ IGBT can deliver turn-off losses that are at ...
Marina Antoniou, Florin Udrea, Friedhelm Bauer   +2 more
openaire   +3 more sources

A dynamic n-buffer insulated gate bipolar transistor

Solid-State Electronics, 2001
Abstract A novel dynamic n-buffer insulated gate bipolar transistor (DB-IGBT) with double gates is proposed and analysed in detail by using two-dimensional numerical simulations. It is found that the turn-off energy loss of this device is reduced and the short-circuit performance is improved significantly compared to the optimised conventional IGBT ...
S Huang, K Sheng, F Udrea, G.A.J Amaratunga   +3 more
openaire   +3 more sources

A thermal model for insulated gate bipolar transistor module

IEEE Transactions on Power Electronics, 2004
A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Z/sub jc/ and case-to-ambient Z/sub ca/.
null Zhaohui Luo, null Hyungkeun Ahn, M.A.E. Nokali   +2 more
openaire   +3 more sources

Bipolar Static Induction Transistor With Insulated Gate

IEEE Transactions on Electron Devices, 2022
In this article, we show a simple power device architecture that combines the features of the SIT and the power MOSFET: insulated gate, positive threshold, fast switching, current deep in the semiconductor, and compact design. It has the conduction characteristics of a BSIT, and it is voltage-controlled as a MOSFET.
Colalongo L., Richelli A.
openaire   +1 more source

Electrical Performances of Insulated Gated Bipolar Transistor (IGBT) in Terms of Bipolar Transistor Driven by Insulated Gate Bias

2020 6th International Conference on Applied System Innovation (ICASI), 2020
Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Hsin-Chia Yang, Yi-Syuan Lin, Rung Jin Chang, Han-Ya Yang, Sung-Ching Chi   +4 more
openaire   +1 more source

Latching in lateral insulated gate bipolar transistors

1987 International Electron Devices Meeting, 1987
The maximum gate controllable current of several different lateral insulated gate bipolar transistor (LIGBT) structures have been investigated. It is shown that the turn-on gate resistance affects the latching current of LIGBT's because of the faster turn-on of the lateral current component than the vertical current component. Addition of p+ sinker, n+
T.P. Chow, D.N. Pattanayak, B.J. Baliga, M.S. Adler   +3 more
openaire   +1 more source

"Insulated gate bipolar transistor (IGBT) with a trench gate structure "

1987 International Electron Devices Meeting, 1987
This paper describes an improved IGBT with a trench gate structure, which demonstrates a low forward voltage drop of 1.4 volts at a forward conduction current density of 200A/cm2. This device structure was fabricated using a self-aligned process that permits closely spaced vertical trench gates with a unit cell of 8 µm.
H.R. Chang, B.J. Baliga, J.W. Kretchmer, P.A. Piacente   +3 more
openaire   +1 more source

Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors

Materials Science Forum, 2006
The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (Ptotal) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness
S. Balachandran, T. Paul Chow, Anant K. Agarwal   +2 more
openaire   +1 more source

A modular gate drive circuit for insulated gate bipolar transistors

Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting, 2002
A novel gate drive circuit for insulated gate bipolar transistors (IGBTs) is presented which provides high-speed switching with attention to dV/dt requirements. It also provides pulse-by-pulse overcurrent protection through on-state voltage monitoring while sending out a fault signal to the control circuit.
S.K. Biswas, B. Basak, K.S. Rajashekara
openaire   +1 more source

Insulated Gate Bipolar Transistors

1998
In this chapter, the basic structure and operating characteristics of the IGBT are first described. The analysis of forward and reverse blocking capability is then performed followed by discussion of the on-state characteristics of IGBTs with various collector structures.
Ranbir Singh, B. Jayant Baliga
openaire   +1 more source