Results 171 to 180 of about 2,204 (218)
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An insulated gate bipolar transistor with high surge endurance
Electronics and Communications in Japan (Part II: Electronics), 1996AbstractThe relationship between the device property under drain‐source breakdown and device structure parameters of insulated gate bipolar transistors was simulated. Then the following facts were revealed: 1) the impurity concentration in the n−drain layer and the layer thickness determine the breakdown mode.
Norihito Tokura +2 more
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Equivalent circuit model for an insulated gate bipolar transistor
IEE Proceedings - Electric Power Applications, 2005An equivalent-circuit model for an insulated gate bipolar transistor is developed. The model is based on a one-dimensional device simulation model. It also adopts a multi-MOS model so as to be able to include the doping variation in the MOS body. The model can be used for both circuit simulations and simple device simulations.
C.-H. Kao, C.-C. Tseng, Y.-C. Liang
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Recent advances in insulated gate bipolar transistor technology
IEEE Transactions on Industry Applications, 1990Device design of the insulated gate bipolar transistor (IGBT) has been optimized to reduce the distributed transmission-line effect. In addition, cell geometry is chosen to yield high latchup current capability and low forward-voltage drop simultaneously. The vertical structure is optimized to enhance both the turn-off speed and the safe operating area
H. Yilmaz +4 more
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Parasitic extraction methodology for insulated gate bipolar transistors
APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058), 2000This paper presents a methodology for extraction of the electrical package parasitics of insulated gate bipolar transistor power modules using simple electrical measurements. Nonidealities of device performance in zero-voltage and zero-current switching are exploited to obtain the parasitic collector and emitter inductance.
M. Trivedi, K. Shenai
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Mahalanobis Distance Approach for Insulated Gate Bipolar Transistors Diagnostics
2010Insulated gate bipolar transistors (IGBT) are used in critical application areas such as inverters in hybrid cars, motion control systems for variable speed motor drives and high power switch mode power supplies. In these critical applications, diagnostic approaches are required to monitor the health and predict the reliability of these devices to ...
Nishad Patil +2 more
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A novel high performance insulated gate bipolar transistor
Solid-State Electronics, 2006Abstract For the first time, a new concept of LDE-IGBT (local drift-region enhanced IGBT) is proposed and verified by two-dimensional (2D) device-circuit mixed simulations. The structure of the proposed device is almost identical to that of the conventional IGBT, except for an additional n + plugged region under the gate contact. The proposed device
Fei Zhang, Lina Shi, Chengfang Li
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A transient model for insulated gate bipolar transistors (IGBTs)
International Journal of Electronics, 2008In this paper, we present a physics-based model for the non punch-through (NPT) insulated gate bipolar transistor (IGBT) during transient turn off period. The steady state part of the model is derived from the solution of the ambipolar diffusion equation in the drift region of the NPT IGBT.
Sehwan Ryu +5 more
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Silicon IGBT (Insulated Gate Bipolar Transistor)
2011The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
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D.C. Drive System With the Insulated Gate Bipolar Transistors
2006 IEEE International Conference on Automation, Quality and Testing, Robotics, 2006A reversible D.C. drive system, which employs a four-quadrant chopper with the insulated gate bipolar transistors (IGBT), is presented. The chopper circuit employs a "half-bridge" configuration. The operation of the converter was tested at a command frequency of [1÷10] kHz.
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Latch-up prevention in insulated gate bipolar transistors
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002A technique for improving the latch-up capability of the LIGBT (lateral insulated-gate bipolar transistor) is proposed. A shallow trench at the cathode is used to reduce the p-base resistance and eliminate the p-well resistance, and consequently prevent the device from latching-up at low voltages.
A. Nezar, P.K.T. Mok, C.A.T. Salama
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