Results 1 to 10 of about 65,573 (269)

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

A CC/VC‐based power tracking method for photovoltaic inverter operated in voltage control mode

IET Power Electronics
The active power control of photovoltaic (PV) inverters without energy storage can flatten the fluctuating power and support the voltage amplitude and frequency of the grid.
ZhenXiong Wang, Yingjie Peng, Hao Yi, Wei Zhang, Jingting Wu, Qiru Li, Fang Zhuo   +6 more
doaj   +1 more source

Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer

Advanced Functional Materials, EarlyView.
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero, Meghna Jha, Elsa Veronica Flores‐Vela, Joost Kimpel, Andreas Schaefer, Jiali Guo, Jesika Asatryan, Alberto Peinador Veiga, Shuichi Haraguchi, Per‐Anders Carlsson, Jaime Martín, Mariano Campoy‐Quiles, Christian Müller   +12 more
wiley   +1 more source

Gas‐insulated switchgear partial discharge classification method based on deep transfer learning using experimental and field data

High Voltage
Gas‐insulated switchgear (GIS) plays a critical role in ensuring the reliability of power systems, but partial discharge (PD) is a primary cause of failures within GIS equipment.
Xutao Han, Haotian Wang, Jie Cui, Yang Zhou, Tianyi Shi, Xuanrui Zhang, Junhao Li   +6 more
doaj   +1 more source

A global inertia sharing control scheme for hybrid five-port power electronic transformer to achieve energy coordination, transient switching, and submodule balancing

International Journal of Electrical Power & Energy Systems
In high-power hybrid AC/DC distribution systems, multi-port power electronic transformer (PET) encounters challenges such as energy coordination, transient switching, and submodule balancing.
Wenjie Du, Wenjie Chen, Ling Li, Haowei Dang, Hongpeng Wang, Yongqi Huo, Huibin Wu, Ding Su, Xu Yang   +8 more
doaj   +1 more source

Effects of Magnetic Fields on Quench Characteristics of Superconducting Tape for Superconducting Fault Current Limiter

Applied Sciences, 2019
In DC systems, DC resistive type superconducting fault current limiters (R-SFCLs) can respond within a few hundred milliseconds and limit the fault current to a very low level to protect the power equipment in DC systems.
Bin Xiang, Lei Gao, Muhammad Junaid, Zhiyuan Liu, Yingsan Geng, Jianhua Wang, Satoru Yanabu   +6 more
doaj   +1 more source

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

Advanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa, Lin‐Ding Yuan, Stephen D. Wilson, James M. Rondinelli   +3 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Enhanced high‐temperature energy storage density of polypropylene‐based materials by micro‐crosslinked structure design with N‐type organic semiconductor

High Voltage
In this study, the authors proposed a promising structure design, the micro‐crosslinked polypropylene (PP), to enhance the high‐temperature energy storage density.
Hongbo Liu, Lu Cheng, Zhiyuan Li, Jiakai Zeng, Wenfeng Liu, Shengtao Li   +5 more
doaj   +1 more source