Results 201 to 210 of about 64,483 (349)

From Mechanics to Electronics: Influence of ALD Interlayers on the Multiaxial Electro‐Mechanical Behavior of Metal–Oxide Bilayers

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin AlOxHy interlayers between aluminum films and polymer substrates significantly improve electro‐mechanical properties of flexible thin film systems. By precisely controlling interlayer thickness using atomic layer deposition, this study identifies an optimal interlayer thickness of 5–10 nm that enhances ductility and delays cracking.
Johanna Byloff   +9 more
wiley   +1 more source

Imaging of Biphoton States: Fundamentals and Applications

open access: yesAdvanced Functional Materials, EarlyView.
Quantum states of two photons exhibit a rich polarization and spatial structure, which provides a fundamental resource of strongly correlated and entangled states. This review analyzes the physics of these intriguing properties and explores the various techniques and technologies available to measure them, including the state of the art of their ...
Alessio D'Errico, Ebrahim Karimi
wiley   +1 more source

ZAD mediates chromatin binding and insulator activity of Drosophila Pita and can be replaced with the human ZFP276 ZAD-like domain. [PDF]

open access: yesEpigenetics Chromatin
Vasileva Y   +6 more
europepmc   +1 more source

Dual‐Interface‐Dominant Cathode Architectures Enabling Fast Sulfur Redox and Stable Interfaces in All‐Solid‐State Li‐S Batteries

open access: yesAdvanced Functional Materials, EarlyView.
An optimized carbon host nanostructure enables a dual‐interface‐dominant architecture in sulfur cathodes of solid‐state Li‐S batteries by selectively forming sulfur|carbon and sulfur|solid electrolyte interfaces. This tailored interfacial configuration accelerates sulfur redox kinetics by establishing enriched Li+/e– transport networks, while ...
Zhao Yang   +13 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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