Results 201 to 210 of about 64,483 (349)
Ultrathin AlOxHy interlayers between aluminum films and polymer substrates significantly improve electro‐mechanical properties of flexible thin film systems. By precisely controlling interlayer thickness using atomic layer deposition, this study identifies an optimal interlayer thickness of 5–10 nm that enhances ductility and delays cracking.
Johanna Byloff +9 more
wiley +1 more source
An Unsupervised Image Enhancement Framework for Multiple Fault Detection of Insulators. [PDF]
Guo J, Han G, He M, Li Y, Qin L, Liu K.
europepmc +1 more source
Research on Performance Testing Methods for Electrical Equipment in High-Speed and Complex Environments: A Case Study on Roof Insulators of High-Speed Trains [PDF]
Yafei Huang +3 more
openalex +1 more source
Imaging of Biphoton States: Fundamentals and Applications
Quantum states of two photons exhibit a rich polarization and spatial structure, which provides a fundamental resource of strongly correlated and entangled states. This review analyzes the physics of these intriguing properties and explores the various techniques and technologies available to measure them, including the state of the art of their ...
Alessio D'Errico, Ebrahim Karimi
wiley +1 more source
ZAD mediates chromatin binding and insulator activity of Drosophila Pita and can be replaced with the human ZFP276 ZAD-like domain. [PDF]
Vasileva Y +6 more
europepmc +1 more source
An optimized carbon host nanostructure enables a dual‐interface‐dominant architecture in sulfur cathodes of solid‐state Li‐S batteries by selectively forming sulfur|carbon and sulfur|solid electrolyte interfaces. This tailored interfacial configuration accelerates sulfur redox kinetics by establishing enriched Li+/e– transport networks, while ...
Zhao Yang +13 more
wiley +1 more source
An Attention-Based Bidirectional Feature Fusion Algorithm for Insulator Detection. [PDF]
Gao B, Guo J, Wang Y, Li D, Jia X.
europepmc +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source

