Results 121 to 130 of about 21,307 (263)

Electrified Damage in Motion Systems

Advanced Engineering Materials, EarlyView.
The electrified damage in motion systems is a fundamental framework presenting the degradation pathway arising from the coupling of electrical energy transport with mechanical contact and interfacial chemistry. The framework positions electrified damage as a distinct degradation regime with unique characteristic surface morphologies and failures of ...
M. Humaun Kabir, Angelina Nguyen, Hong Liang   +2 more
wiley   +1 more source

Theoretical study on the geometry, aromaticity and electronic properties of porphyrin analogues. [PDF]

RSC Adv
Chen X, Li D, Zhang C, She Y, Yang YF.
europepmc   +1 more source

Stretching the Printability Metric in Direct‐Ink Writing with Highly Extensible Yield‐Stress Fluids

Advanced Functional Materials, EarlyView.
This study introduces “drawability” as a new metric for assessing printability in direct‐ink writing, focusing on gap‐spanning performance and speed robustness. By designing yield‐stress fluids with high extensibility, we demonstrate that extensional strain‐to‐break significantly enhances printability.
Chaimongkol Saengow, Samya Sen, Joaquin Yus, Eliza E. Lovrich, Amanda G. Hoika, Kelly M. Chang, Arielle A. Pfeil, Nellie Haug, Amy J. Wagoner Johnson, Randy H. Ewoldt   +9 more
wiley   +1 more source

Qualitative analysis and numerical simulation of ABC fractional impulsive differential systems with implicit nonlinear terms and integral boundary conditions. [PDF]

PLoS One
Sharif AA, Hamood M, Ghadle KP.
europepmc   +1 more source

Polarizable Vanadium Dipoles Promote Water Dissociation on Vanadium‐Based Metal Organic Framework

Advanced Functional Materials, EarlyView.
The polarization of unpaired V 3d electrons weakens the H─O bond to improve water dissociation by the dual Vδ+:O─H and Pλ−:H─O coupling hydrogen bonds formation and relaxation. P@V‐MOF electrocatalyst shows low overpotentials (94 mV in acid, 178 mV in neutral, and 77 mV in alkaline solutions) with excellent stability for effective overall water ...
Xinjuan Liu, Jun Xu, Minmin Fan, Jingcheng Xu, Mengyuan Li, Yun Gong, Weiwei Yang, Lei Li, Yong Zhou, Deqiang Zhao, Yuhua Xue, Xingtao Xu, Chang Q. Sun, Liming Dai   +13 more
wiley   +1 more source

Beyond location modeling and GIS: Integration and bridging

Computers & Operations Research
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
openaire   +1 more source

Advanced Experimental Technology, Theory and Numerical Methods in Geomaterials and Concrete Materials. [PDF]

Materials (Basel)
Sun W, Li Y, Liu R, Yu S.
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

An innovative concept of using community information for surveys and developing a map of Simulium breeding sites. [PDF]

Int Health
Boakye DA, Atekem K, Ayisi F, Surakat O, Oumar AM, Koala L, Elaagip A, de Souza DK, Tallant J, Leff S, Gatawa E, Heggen A, Mackenzie CD.   +12 more
europepmc   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source