Results 121 to 130 of about 4,540,782 (391)

A high-efficiency modeling method for analog integrated circuits

Chip
Integrated circuits (ICs) are the foundation of information technology development. The optimal design scheme of an analog IC is determined by iteratively running the simulation software and comparing the performance metrics.
Dongdong Chen, Yunqi Yang, Xianglong Wang, Di Li, Guoqing Xin, Yintang Yang   +5 more
doaj   +1 more source

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems society information [PDF]

, 2019

openalex   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source

Electrical Manipulation of Antiferromagnetic Random‐Access Memory Device by the Interplay of Spin‐Orbit Torque and Spin‐Transfer Torque

Advanced Electronic Materials
Antiferromagnets (AFM) hold significant promise as ideal candidates for high‐density and ultrafast memory applications. Electrical manipulation of exchange bias (EB) has emerged as an effective solution to integrate AFMs into magnetic memories as active ...
Ao Du, Daoqian Zhu, Zhiyang Peng, Zongxia Guo, Min Wang, Kewen Shi, Kaihua Cao, Chao Zhao, Weisheng Zhao   +8 more
doaj   +1 more source

Investigation of SiC MOSFET Structures for Surge Robustness in the Third Quadrant Under Various $V_{\text{GS}}$ Biases

IEEE Open Journal of Power Electronics
In this work, SiC planar-gate MOSFET (PG-MOS), SiC short-channel (0.3$\mathbf {\mu m}$) MOSFET (SCMOS), and SiC JBSFET are tested for the third quadrant I-V temperature characteristics and surge current capability at different gate-source bias voltage ...
Xinbin Zhan, Yanjing He, Xi Jiang, Hao Yuan, Qingwen Song, Xiaoyan Tang, Xiaowu Gong, Yuming Zhang   +7 more
doaj   +1 more source

Novel Floating General Element Simulators Using CBTA [PDF]

, 2012
In this study, a novel floating frequency dependent negative resistor (FDNR), floating inductor, floating capacitor and floating resistor simulator circuit employing two CBTAs and three passive components is proposed.
Ayten, Umut Engin, Herencsar, Norbert, Koton, Jaroslav, Sagbas, Mehmet   +3 more
core   +1 more source

NanoMOF‐Based Multilevel Anti‐Counterfeiting by a Combination of Visible and Invisible Photoluminescence and Conductivity

Advanced Functional Materials, EarlyView.
This study presents novel anti‐counterfeiting tags with multilevel security features that utilize additional disguise features. They combine luminescent nanosized Ln‐MOFs with conductive polymers to multifunctional mixed‐matrix membranes and powder composites. The materials exhibit visible/NIR emission and matrix‐based conductivity even as black bodies.
Moritz Maxeiner, Ruben Maile, Murat Cuvalli, Andreas Wolf, Ayisha Komal, Robert Oestreich, Christoph Janiak, Karl Mandel, Alexander Knebel, Klaus Müller‐Buschbaum   +9 more
wiley   +1 more source

Realizing giant ferroelectricity in stable wz-Al1 − x B x N alloys by controlling the microstructure and elastic constant

npj Computational Materials
The emerged wurtzite (wz) Al1−x B x N alloy has drawn increasing attention due to its superior ferroelectricity and excellent compatibility with microelectronics.
Jie Su, Zhengmao Xiao, Xinhao Chen, Yong Huang, Zhenhua Lin, Jingjing Chang, Jincheng Zhang, Yue Hao   +7 more
doaj   +1 more source

High Performance Self-Powered Photodetectors Based on Graphene Nanoribbons/Al₂O₃/InGaZnO Heterojunctions

IEEE Photonics Journal
Self-powered photodetectors which operate without external power sources hold immense promise in future photodetection systems. To achieve high-performance self-powered optoelectronic devices, efficient electron-hole pair separation is critical to ...
Xiaoling Ye, Xiaoxiao Zheng, Lei Han, Yu Sun, Liang Wang, Ziheng Li, Wencheng Liu, Benqing Liu, Nan Han, Safia Khan, Syed Hassan Mujtaba Jafri, Mingyang Wang, Yafei Ning, Hu Li   +13 more
doaj   +1 more source

Design of silicon‐based two‐dimensional photonic integrated circuits: XOR gate [PDF]

, 2013
R. Bchir, Afrah Bardaoui, Hatem Ezzaouia
openalex   +1 more source