Toward an ion-based large-scale integrated circuit: design, simulation, and integration. [PDF]
Edri Fraiman N +3 more
europepmc +1 more source
Network centrality, support organizations, exploratory innovation: Empirical analysis of China's integrated circuit industry. [PDF]
Chen Q, Sun T, Wang T.
europepmc +1 more source
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
wiley +1 more source
A Review: The Beauty of Serendipity Between Integrated Circuit Security and Artificial Intelligence. [PDF]
Dong C +7 more
europepmc +1 more source
Design and Verification of a New Universal Active Filter Based on the Current Feedback Operational Amplifier and Commercial AD844 Integrated Circuit. [PDF]
Chen HP +4 more
europepmc +1 more source
A low power NAND gate integrated circuit employing thin film resistors and lateral p-n-p transitors Final engineering report [PDF]
Low power NAND gate integrated circuit employing thin film resistors and lateral p-n-p ...
core +1 more source
An efficient NiOx HTL is successfully prepared by introducing MXene as an additive without further surface modification to fabricate high‐performance FASn0.5Pb0.5I3 perovskite solar cells. The introduction of MXene contributes to improved conductivity of NiOx, better aligned at NiOx/perovskite interfaces, and enhanced quality of perovskite films ...
Lijun Chen +12 more
wiley +1 more source
Van der Waals photonic integrated circuit with coherent light generation. [PDF]
Ren T +12 more
europepmc +1 more source
Recent Progress in Physics-Based Modeling of Electromigration in Integrated Circuit Interconnects. [PDF]
Zhao WS, Zhang R, Wang DW.
europepmc +1 more source
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source

