Results 271 to 280 of about 4,288,583 (377)

Development of MOS Transistors for Radiation-Hardened Large Scale Integrated Circuits and Analysis of Radiation-Induced Degradation [PDF]

open access: bronze, 1994
Hiroshi Kamimura   +5 more
openalex   +1 more source

Ultrafast Room‐Temperature Nanofabrication via Ozone‐Based Gas‐Phase Metal‐Assisted Chemical Etching for High‐Performance Silicon Photodetectors

open access: yesAdvanced Functional Materials, EarlyView.
Ozone‐based gas‐phase metal‐assisted chemical etching enables unprecedented room‐temperature fabrication of high‐quality silicon nanowires. The superior oxidation potential of O3 drives rapid vertical etching (1 µm min−1) while maintaining exceptional structural integrity. The pristine nanowire surfaces enable high‐performance core‐shell photodetectors
Hyein Cho   +11 more
wiley   +1 more source

Ternary Transistors With Reconfigurable Polarities

open access: yesAdvanced Functional Materials, EarlyView.
Polarity‐reconfigurable ternary transistors are demonstrated using black phosphorus homojunction with asymmetric contacts and split‐gate structures. Suppression of majority carrier injection, while Fowler–Nordheim tunneling of low‐density minority carriers persists, enables a well‐defined intermediate state with improved on/off ratios.
Dongju Yeom   +11 more
wiley   +1 more source

External electro-optic integrated circuit probing [PDF]

open access: green, 1990
J.F. Whitaker   +5 more
openalex   +1 more source

Enhancing Indoor Photovoltaic Efficiency to 37.6% Through Triple Passivation Reassembly and n‐Type to p‐Type Modulation in Wide Bandgap Perovskites

open access: yesAdvanced Functional Materials, EarlyView.
Triple Passivation Treatment (TPT) strategy enables 1.75 eV wide‐bandgap perovskite solar cells (WB‐PSCs) with suppressed halide phase segregation and n‐to‐p type surface transition. The photoluminescence quantum yield increases from 0.5 to 2.1%, indicating reduced non‐radiative losses.
Siming Huang   +12 more
wiley   +1 more source

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