Results 51 to 60 of about 3,871,484 (214)

Broadband directional filter in multilayer liquid crystal polymer films at W-band

Frontiers in Photonics
In this work, a four-port directional filter (DF) with a broad passband and low reflection is proposed at the W-band, which comprises three unit filters at 92, 95, and 97 GHz, cascaded in series.
Mengfa Wang, Yiming Wang, Jun Qian, Zhaolin Li, Wenhui Xue, Victor Qi, Xijian Zhang, Haotian Ling, Gongbin Tang, Qingpu Wang, Aimin Song, Aimin Song, Chao Cao, Yifei Zhang   +13 more
doaj   +1 more source

Reversal of the Pinning Direction in the Synthetic Spin Valve with a NiFeCr Seed Layer

Nanomaterials, 2022
The effect of the seed layers on the magnetic properties of the giant magnetoresistance thin films has received a lot of attention. Here, a synthetic spin valve film stack with a wedge-shaped NiFeCr seed layer is deposited and annealed following a zero ...
Shaohua Yan, Weibin Chen, Zitong Zhou, Zhi Li, Zhiqiang Cao, Shiyang Lu, Dapeng Zhu, Weisheng Zhao, Qunwen Leng   +8 more
doaj   +1 more source

Complementary Quantum Logic Family Using Josephson Junctions and Quantum Phase-Slip Junctions [PDF]

, 2019
In this article, we explore a new set of circuits, that incorporate both single-flux-quantum and quantized charge-based complementary quantum logic circuits. Circuits that convert single-flux-quantum voltage pulses to quantized charge pulses and vice versa are introduced that lead to circuits that simplify logic and integration operations of individual
arxiv   +1 more source

3D MICROPACKAGING OF INTEGRATED CIRCUITS [PDF]

Journal of Engineering Science (Chişinău), 2020
A major paradigm change, from 2D IC to 3D IC, is occurring in microelectronic industry. Joule heating is serious in 3D IC, and vertical interconnect is the critical element to be developed. Also, reliability concerns will be extremely important: electromigration and stress-migration.
openaire   +4 more sources

Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT

Micromachines, 2023
The aim of this paper is to model the effects of threading dislocations on both gate and drain currents of AlGaN/GaN high electron mobility transistors (HEMTs).
Censong Liu, Jie Wang, Zhanfei Chen, Jun Liu, Jiangtao Su   +4 more
doaj   +1 more source

Monolithically integrated circuits for Optical injection locking of ring lasers with QKD and QPSK applications [PDF]

arXiv, 2023
Optical injection locking of integrated ring lasers promises to be a key technology of the future, but it is still lacking experimental verification. In this paper we present two monolithically integrated photonic circuits that experimentally realize Optically injection locking of ring lasers.
arxiv  

Impact Ionization Coefficient Prediction of a Lateral Power Device Using Deep Neural Network

Micromachines, 2023
Nowadays, the impact ionization coefficient in the avalanche breakdown theory is obtained using 1-D PN junctions or SBDs, and is considered to be a constant determined by the material itself only.
Jingyu Cui, Linglin Ma, Yuxian Shi, Jinan Zhang, Yuxiang Liang, Jun Zhang, Haidong Wang, Qing Yao, Haonan Lin, Mengyang Li, Jiafei Yao, Maolin Zhang, Jing Chen, Man Li, Yufeng Guo   +14 more
doaj   +1 more source

Designs and Applications for the Multimodal Flexible Hybrid Epidermal Electronic Systems

Research
Research on the flexible hybrid epidermal electronic system (FHEES) has attracted considerable attention due to its potential applications in human–machine interaction and healthcare.
Ding Li, Tianrui Cui, Zigan Xu, Shuoyan Xu, Zirui Dong, Luqi Tao, Houfang Liu, Yi Yang, Tian-Ling Ren   +8 more
doaj   +1 more source

Integrated circuit-based electrochemical sensor for spatially resolved detection of redox-active metabolites in biofilms

Nature Communications, 2014
Despite advances in monitoring spatiotemporal expression patterns of genes and proteins with fluorescent probes, direct detection of metabolites and small molecules remains challenging.
Daniel L. Bellin, H. Sakhtah, J. Rosenstein, P. Levine, Jordan Thimot, Kevin J. Emmett, L. Dietrich, K. Shepard   +7 more
semanticscholar   +1 more source

4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process

Nanomaterials, 2022
In this paper, the fabrication and electrical performance optimization of a four-levels vertically stacked Si0.7Ge0.3 channel nanowires gate-all-around transistor are explored in detail. First, a high crystalline quality and uniform stacked Si0.7Ge0.3/Si
Xiaohong Cheng, Yongliang Li, Fei Zhao, Anlan Chen, Haoyan Liu, Chun Li, Qingzhu Zhang, Huaxiang Yin, Jun Luo, Wenwu Wang   +9 more
doaj   +1 more source