Results 121 to 130 of about 99,331 (266)

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Compact and high-resolution spectrometer via Brillouin integrated circuits. [PDF]

Nat Commun
Wang JQ, Yang YH, Zhu ZX, Lu JJ, Li M, Pan X, Ma C, Xiao L, Zhang B, Wang W, Dong CH, Xu XB, Guo GC, Sun L, Zou CL.   +14 more
europepmc   +1 more source

Tuning Redox Dynamics in Cu‐Based Electrocatalysts: Effect of Secondary Metals

Advanced Functional Materials, EarlyView.
Advanced analysis of operando X‐ray absorption spectroscopy data reveals that secondary metals affect the redox processes in Cu‐based catalysts for electrocatalytic CO2 reduction. This influences the amount of oxides formed under pulsed reaction conditions and the distribution of reaction products.
Martina Rüscher, Andrea Martini, Eduardo Ortega, Lichen Bai, Eric Liberra, Daniel Escalera‐López, Hyo Sang Jeon, Antonia Herzog, Clara Rettenmaier, Dorottya Hursán, David Koshy, Mariana Cecilio de Oliveira Monteiro, Timon Wagner, Leon Jacobse, Felix Haase, Arno Bergmann, Janis Timoshenko, Beatriz Roldan Cuenya   +17 more
wiley   +1 more source

Advancements in transfer printing techniques and their applications in photonic integrated circuits. [PDF]

Light Sci Appl
Yu C, Zhang M, Liang L, Qin L, Chen Y, Lei Y, Wang Y, Song Y, Qiu C, Jia P, Li D, Wang L.   +11 more
europepmc   +1 more source

Extraordinary n‐type Tellurium‐Free Thermoelectric Performance of Y‐Doped BiSe via Synergistic Effect of Vacancies and Band Engineering

Advanced Functional Materials, EarlyView.
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie, Fang Lyu, Xiaolong Sun, Chang Li, Xiaolu Zhu, Liangwei Hu, Qianfeng Ding, Wenjie Zhou, Muyang Huang, Yineng Gou, Yi Zhao, Han Tang, Wei Cao, Yue Hou, Yun Zheng, Ady Suwardi, Ziyu Wang   +16 more
wiley   +1 more source

Atomic Force Microscopy (AFM)-Based Metrology for Advanced Etching in Three-Dimensional Integrated Circuits. [PDF]

Micromachines (Basel)
Chang J, Wang S, Liang S, Feng X, Zhao W.   +4 more
europepmc   +1 more source

High density lithium niobate photonic integrated circuits. [PDF]

Nat Commun, 2023
Li Z, Wang RN, Lihachev G, Zhang J, Tan Z, Churaev M, Kuznetsov N, Siddharth A, Bereyhi MJ, Riemensberger J, Kippenberg TJ.   +10 more
europepmc   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Exploring the feedback limits of quantum dot lasers for isolator-free photonic integrated circuits. [PDF]

Light Sci Appl
Shi Y, Dong B, Ou X, Prokoshin A, Shang C, Bowers JE, Wan Y.   +6 more
europepmc   +1 more source

Low power flexible monolayer MoS₂ integrated circuits. [PDF]

Nat Commun, 2023
Tang J, Wang Q, Tian J, Li X, Li N, Peng Y, Li X, Zhao Y, He C, Wu S, Li J, Guo Y, Huang B, Chu Y, Ji Y, Shang D, Shang D, Du L, Yang R, Yang W, Bai X, Shi D, Zhang G.   +22 more
europepmc   +1 more source