Results 31 to 40 of about 1,522 (120)

A Hybrid Ultra‐High Voltage DC Transformer With Digital Twin‐Driven Operation and Control

open access: yesDigital Twins and Applications, Volume 3, Issue 1, January/December 2026.
This study introduces a digital twin‐driven hybrid ultra‐high‐voltage DC transformer (UHVDCT) that combines high‐capacity LCCs with low‐capacity MMCs at the UHV side. This innovative topology reduces MMC requirements by 32.9% while ensuring stable power flow and dynamic reactive balance through real‐time virtual‐physical synchronization.
Ling Xu   +6 more
wiley   +1 more source

Investigation of FACTS devices to improve power quality in distribution networks [PDF]

open access: yes, 2011
Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability issues in distribution networks carrying ...
Rehman Shaikh, Muhammad Asim   +1 more
core   +1 more source

Analysis of Subsequent Commutation Failures Caused by Valve‐Side Single‐Phase‐to‐Ground Faults in Hybrid Cascaded HVDC Systems and Corresponding Suppression Measures

open access: yesIET Renewable Power Generation, Volume 20, Issue 1, January/December 2026.
The valve‐side single‐phase‐to‐ground (SPG) fault represents one of the most critical issues affecting the safe operation of hybrid cascade HVDC systems. This paper studies the mechanism of subsequent commutation failure caused by SPG faults on the MMC valve side in hybrid cascade HVDC systems and proposes a suppression measure.
Tao Zheng, Yuting Xue
wiley   +1 more source

Extending low‐temperature sintering technique to large‐sized whole‐wafer power semi‐conductor devices

open access: yesHigh Voltage, Volume 10, Issue 4, Page 1053-1060, August 2025.
Abstract With the enormous growth in the capacity of electrical equipment, power semi‐conductor devices are developing rapidly towards larger size and higher capacity. To suppress the thermal resistance and achieve efficient heat dissipation, the authors focus on developing a low‐temperature sintering technique for wafer‐level high‐power semi‐conductor
Chen Yang   +13 more
wiley   +1 more source

Development of a 1000V, 200A, low-loss, fast-switching, gate-assisted turn-off thyristor [PDF]

open access: yes
Feasibility was demonstrated for a thyristor that blocks 1000V forward and reverse, conducts 200A, and turns on in little more than 2 microsec with only 2A of gate drive.
Lowry, L. R., Schlegel, E. S.
core   +4 more sources

Power-electronic systems for the grid integration of renewable energy sources: a survey [PDF]

open access: yes, 2006
The use of distributed energy resources is increasingly being pursued as a supplement and an alternative to large conventional central power stations. The specification of a powerelectronic interface is subject to requirements related not only to the
Bialasiewicz, Jan T.   +7 more
core   +1 more source

Research on the Performance of Integrated Gate Commutated Thyristor

open access: yesKongzhi Yu Xinxi Jishu, 2012
It presented the structure of IGCT and its features in four operating stages (blocking state, turn-on, on-state and turn-off). It introduced the main parameters and application notices in the four operating stages.
吴煜东, 陈芳林, 雷云, 蒋谊
doaj  

Optimization Design Method for IGCT Gate Pole Drive Based on Improved Grey Wolf Algorithm

open access: yesEnergies
Integrated Gate-Commutated Thyristor (IGCT) serves as the core power electronic device in high-voltage and high-power renewable energy conversion systems.
Ruihuang Liu   +5 more
doaj   +1 more source

Improved Control Strategy of Current-Source Converter for HVDC System

open access: yesCSEE Journal of Power and Energy Systems
Pulse width modulated current-source converter (PWM-CSC) has great prospects in high voltage direct current transmission system (HVDC) due to its attractive features, such as flexible control characteristics, ability to avoid commutation failure, and ...
Wenwen Zhang   +6 more
doaj   +1 more source

Robustness of integrated gate commutated thyristor in switching self-clamping mode

open access: yesActa Physica Sinica
<sec>As a thyristor-like device, integrated gate commutated thyristor (IGCT) is more applicable to the high-voltage and high-power fields due to the lower on-state voltage drop, and a combination of transparent anode and hard drive enables IGCT to turn off faster and more reliably.
Wuhua YANG   +5 more
openaire   +1 more source

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