Results 31 to 40 of about 652 (101)

Protection in DC microgrids: a comparative review

IET Smart Grid, Volume 1, Issue 3, Page 66-75, October 2018., 2018
A direct current (DC) microgrid has become a superior power system in recent years due to the development of DC loads and higher efficiency of DC systems. One of the challenging problems on DC microgrids operation is protection, and it is still a particular concern associated with the challenges of developing a proper protection scheme owing to its ...
Navid Bayati, Amin Hajizadeh, Mohsen Soltani   +2 more
wiley   +1 more source

Design of cooling structure improvement of hybrid commutated converter valve

High Voltage, Volume 10, Issue 3, Page 570-580, June 2025.
Abstract This paper presents a thermal management framework for 120 kV hybrid commutated converter (HCC) valves, addressing critical cooling challenges in multi‐hundred‐MW power conversion systems. Power loss calculations under rated (1.0 p.u.) and overload (1.2 p.u.) conditions demonstrate that HCC valves achieve comparable loss levels to line ...
Xu He, Lu Qu, Xiaoguang Wei, Fang Cai, Zhanqing Yu, Tianhui Yang, Yurong Luo, Gongyi Zhang   +7 more
wiley   +1 more source

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Advanced Electronic Materials, Volume 4, Issue 1, January 2018., 2018
Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices and applications. This article surveys and presents an enumerated list of the materials, physics, device and associated application research ...
J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa‐Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, J. A. Simmons   +32 more
wiley   +1 more source

High‐Current Cryogenic DC Solid‐State Circuit Breaker for Electric Aircraft

IET Electric Power Applications, Volume 19, Issue 1, January/December 2025.
Cryogenic and superconducting technologies have great potential to significantly enhance the power density and efficiency of electric propulsion aircraft. This paper presents the design of a 300 V/1700 A DC solid‐state circuit breaker (SSCB) operating at cryogenic temperatures.
Zhongying Wang, Jiawen Xi, Xianwu Zeng, Emelie Nilsson, Jean‐francois Rouquette, Edwin Calderon, Ravi Kiran Surapaneni, Ludovic Ybanez, Xiaoze Pei   +8 more
wiley   +1 more source

High‐Voltage Converter for the Traction Application

Advances in Power Electronics, Volume 2016, Issue 1, 2016., 2016
High‐voltage converter employing IGCT switches (VDC = 2800 V) for traction application is presented. Such a power traction drive operates with an unstable input voltage over 2000 ⋯ 4000 V DC and with an output power up to 1200 kW. The original power circuit of the high‐voltage converter is demonstrated.
Sergey Volskiy, Yury Skorokhod, Dmitriy Sorokin, Pavol Bauer   +3 more
wiley   +1 more source

Cryogenic DC Circuit Breaker Based on High‐Power Press‐Pack IGBT

IET Electric Power Applications, Volume 19, Issue 1, January/December 2025.
This paper presents the performance of cryogenically compatible 3.3 kV/1.5 kA PP‐IGBTs as the main circuit breaker in a hybrid circuit breaker. The 3.3 kV/1.5 kA press‐pack IGBT can interrupt currents exceeding 5.1 kA when immersed in a liquid nitrogen bath. PP‐IGBTs are promising candidates for high‐power circuit breakers in cryogenically cooled power
Zhongying Wang, Jiawen Xi, Xianwu Zeng, Stefan Steinhoff, Emelie Nilsson, Jean‐Francois Rouquette, Edwin Calderon, Ravi Kiran Surapaneni, Ludovic Ybanez, Xiaoze Pei   +9 more
wiley   +1 more source

Where Higher Power Handling Capability is Required - IGCT is the Right Choice

Kongzhi Yu Xinxi Jishu, 2015
Integrated gate-commutated thyristor (IGCT) is described as ideal switch in high power applications, not only because of its high reliability, but also for its low device losses resulting in low system losses. IGCT is compared with state of the art IGBT,
Thomas Stiasny, Vasileios Kappatos, Thomas Setz, Sven Klaka, Makan Chen, Madhan Mohan   +5 more
doaj  

An analytical modeling and estimating losses of power semiconductors in a three-phase dual active bridge converter for MVDC grids [PDF]

, 2016
Due to the increasing installation of renewable and decentralized power sources, Medium-voltage dc (MVDC) grids has been considered for an alternative application to medium-voltage ac (MVAC) application.
Lee, Youngsil, Vakil, Gaurang, Watson, Alan James, Wheeler, Patrick   +3 more
core  

An Overview of VSC‐HVDC Systems and Challenges to Harvest Wind Energy Potential Considering South Asian Region as a Case Study

International Journal of Energy Research, Volume 2025, Issue 1, 2025.
The voltage source converter‐based high voltage direct current transmission (VSC‐HVDC) is considered the most appropriate option to harness the maximum potential of renewable energy, particularly offshore wind. With improved reliability and functionality of the network, reduced conversion losses, and reduced cost, the VSC‐based multiterminal direct ...
Muhammad Ahmad, Md Shafiullah, Muhammed Y. Worku, Md Shafiul Alam, Muhammad Khalid, Paul Adedeji   +5 more
wiley   +1 more source

Recent Advancements in IGCT Technologies for High Power Electronics Applications [PDF]

, 2020
Keywords «IGCT», «Power semiconductor device», «High power discrete device», «Bipolar device», «Industrial application». Abstract In this paper, we review the progress made recently for further developing the Integrated Gate Commutated Thyristor (IGCT ...
++ +, Björn Backlund ++, Jan Vobecky ++, Martin Arnold ++, Munaf Rahimo ++, Thomas Stiasny, Tobias Wikström ++, Umamaheswara Vemulapati   +7 more
core