Results 191 to 200 of about 26,290 (260)

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Innovative Value of Amide Proton Transfer Imaging in the Diagnosis and Treatment of Brain Gliomas: From Basic Principles to Clinical Applications. [PDF]

Technol Cancer Res Treat
Yao C, Hu W, Liu H, Ran Z, Hou J, Song Q.   +5 more
europepmc   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

Quantitative Characterization of Micropore Structure and Seepage Characteristics of Diagenetic Facies and Their Implications for Development in the Highly Inhomogeneous Chang 9 Reservoir, Ordos Basin. [PDF]

ACS Omega
Gu X, Ma J, Pu J, Liu Y, Xu H, He Y, Huang F.   +6 more
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Challenges and Practices in the Analysis of Silicon Kerf from the PV Industry by Combinatorial Analytical Methods. [PDF]

Materials (Basel)
Mubaiwa T, Di Sabatino M, Khromov S, Nybrodahl M, Azarov A, Safarian J.   +5 more
europepmc   +1 more source

Engineering a Correlated Narrow‐Gap Semiconductor: Effects of Ga Substitution in EuZn2P2

Advanced Electronic Materials, EarlyView.
ABSTRACT The effect of Ga substitution on the electronic, magnetic, and low‐energy responses of the Zintl phase EuZn2P2${\rm EuZn}_2 {\rm P}_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time‐domain spectroscopy (THz‐TDS). Incorporating Ga into EuZn2P2${\rm EuZn}_2 {\rm P}_2$ (EuZn1.8Ga0.2P2${\rm EuZn}_{1.8} {\
Mateus Dutra, Esteban Marulanda, Gustavo G. Vasques, Jaime Ferreira Oliveira, Pedro C. Sabino, Rebeca Brigato Delgado, Leticie Mendonça‐Fereira, Adriano R. V. Benvenho, Elisa Baggio‐Saitovitch, Ricardo K. Machado, Nicolas M. Kawahala, Julian Munevar, Marcos A. Avila, Felix G. G. Hernandez   +13 more
wiley   +1 more source

Frame-wise multi-echo distortion correction for superior functional MRI. [PDF]

Imaging Neurosci (Camb)
Van AN, Montez DF, Laumann TO, Cho PN, Suljic V, Madison T, Baden NJ, Ramirez-Perez N, Scheidter KM, Monk JS, Whiting FI, Adeyemo B, Chauvin RJ, Krimmel SR, Metoki A, Rajesh A, Roland JL, Salo T, Wang A, Weldon KB, Sotiras A, Shimony JS, Kay BP, Nelson SM, Tervo-Clemmens B, Marek SA, Vizioli L, Yacoub E, Satterthwaite TD, Gordon EM, Fair DA, Tisdall MD, Dosenbach NUF.   +32 more
europepmc   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

Universal exact solutions for multiphysical inhomogeneities and inclusions in Fourier space. [PDF]

Proc Natl Acad Sci U S A
Zhu J, Zhang Q, Wu HH, Liu ZE, Ma H, Zhang B, Liu X, Gao H.   +7 more
europepmc   +1 more source