Results 61 to 70 of about 13,764 (311)

Enhancement of the Optoelectric and Photovoltaic Responses of Al/PVP:ZnTiO3/p‐Si Structure by Graphene Nanoparticles

Advanced Photonics Research
In this work, the optoelectronic response of Al/p‐Si photodiodes (PDs) with and without (PVP:Gr‐ZnTiO3) composite interlayer is investigated in dark and under various light intensities (P).
Ali Barkhordari, Şemsettin Altındal, Süleyman Özçelik, Hamid Reza Mashayekhi, Mustafa Muradov, Yashar Azizian‐Kalandaragh   +5 more
doaj   +1 more source

Corrosion Behaviour and Residual Stress State of Laser-Welded Ti6Al4V/AA7075 Joints with a Ag Interlayer

Journal of Manufacturing and Materials Processing
In this study, the corrosion performance and near-surface residual stress state of laser-welded Ti6Al4V/AA7075 dissimilar joints produced with a silver (Ag) interlayer are investigated.
Asim Iltaf, Narges Ghafouri, Noureddine Barka, Shayan Dehghan, Rafiq Ahmad   +4 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Microstructure and properties of tungsten/chromium/steel HIP diffusion welded joints

Fenmo yejin jishu
The diffusion connection between tungsten and steel in tritium breeding blanket was successfully achieved by indirect welding and hot isostatic pressing, using low radioactive pure chromium as the interlayer materials, and the microstructure and ...
QIN Sigui, WANG Jichao, WANG Wanjing, YIN Yi, SHI Yingli, YU Hongxin   +5 more
doaj   +1 more source

Mechanical Behavior and Fracture Mechanisms of MXene/PVDF Nanocomponsites: In Situ Characterization and Multiscale Analysis

Advanced Functional Materials, EarlyView.
Multiscale experiments and modeling reveal how Ti3C2Tx MXene nanosheets reinforce PVDF nanocomposites. An optimal MXene loading (∼1 wt.%) nearly doubles tensile strength through efficient stress transfer, flake alignment, and crack‐deflection mechanisms, transforming ductile polymer behavior into a controlled multi‐stage fracture pathway which aligns ...
Bita Soltan Mohammadlou, James FitzPatrick, Li Meng, Kateryna Shevchuk, Ahmad Najafi, Yury Gogotsi   +5 more
wiley   +1 more source

Performance of TenCate Paving Interlayers in Asphalt Concrete Pavements [PDF]

, 2017
As a continued effort of a previously completed project entitled “Performance of TenCate Mirafi PGM-G4 Interlayer-Reinforced Asphalt Pavements in Alaska,” this project evaluated two newly modified paving interlayers (TruPave and Mirapave) through overlay,
Li, Lin, Zhao, Sheng, Liu, Jenny
core  

Interlayer resistance of misoriented MoS₂ [PDF]

Physical Chemistry Chemical Physics, 2017
Interlayer misorientation in bilayer MoS2 exponentially increases the interlayer electron resistivity while leaving the hole resistivity almost unchanged. The asymmetrical effect of misorientation on the electron and hole transport may be exploited in the design and optimization of vertical transport devices such as a bipolar junction transistor.
Kuan Zhou, Darshana Wickramaratne, Supeng Ge, Shanshan Su, Amrit De, Roger K. Lake   +5 more
openaire   +3 more sources

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

, 2003
International audienceThis work reports on the effects of AlN interlayers embedded into the GaN semi-insulating buffer of AlGaN/GaN high electron mobility transistors, in comparison with standard heterostructures without AlN interlayers. Detailed optical
BRANA, AF, I. Moerman, Tirado, J., CALLEJA, E, MUNOZ, E, A. Jiménez, A. F. Braña, Jimenez, A., Z. Bougrioua, E. Calleja, TIRADO, JM, Munoz, E., Braña, A., Moerman, I., J. M. Tirado, Calleja, E., Bougrioua, Z., JIMENEZ, A, Moerman, Ingrid, Bougrioua, Zahia, E. Muñoz   +20 more
core   +1 more source

Orbital Geometry‐Governed Response of Pressure‐Tunable Quantum Defects in hBN

Advanced Functional Materials, EarlyView.
Defects in hBN act as ultrasensitive quantum manometers when the energy of the intradefect optical transitions is modified by lattice compression. The orbital geometry of the electron wave functions governs how electron hopping and Coulomb interactions react uniquely to the reduction of the van der Waals gap and in‐plane compression, leading to robust ...
Magdalena Grzeszczyk, Danis I. Badrtdinov, Kenji Watanabe, Takashi Taniguchi, Cyrus E. Dreyer, Malte Rösner, Maciej Koperski   +6 more
wiley   +1 more source