Results 141 to 150 of about 16,662 (255)

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Two-dimensional molybdenum disulfide nanoparticles intercalated between graphite layers: TEM observation and desulfurization behaviour. [PDF]

Nanoscale Adv
San-Yoshi K, Sasaki T, Kubota T, Sakaguchi N, Shirai M.   +4 more
europepmc   +1 more source

Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics

Advanced Materials, EarlyView.
“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair, Hrisheekesh Thachoth Chandran, Karl Leo, Hans Kleemann   +3 more
wiley   +1 more source

A Perspective on Mg/Al Laminated Metal Composites. [PDF]

Materials (Basel)
Li B, Tan J.
europepmc   +1 more source

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

Advanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae, Ji Hoon Han, Taeyoung Kim, Jongbum Won, Seokmin Park, Gyu Won Kim, Sungsoon Kim, Hong Choi, Taehoon Kim, Hong‐Sub Lee, Jae‐Hyun Lee, Young Jin Choi, Jinwoo Cheon, Wooyoung Shim   +13 more
wiley   +1 more source

Shear strength characteristics of muddy interlayers with different water contents and particle size distributions. [PDF]

PLoS One
Zha Z, Li L, Wu Y, Miao F, Xiang X, Liao D, Wu Z, Xue Y.   +7 more
europepmc   +1 more source

“Smelltronics”—From Gas to Smell Sensing

Advanced Materials, EarlyView.
The emerging field of smelltronics, encompassing sensing technologies for complex volatile organic compounds, holds significant potential for extracting valuable chemical information. It facilitates the noninvasive, real‐time monitoring of humans, food, and the environment.
Takeshi Ono, Tsunaki Takahashi, Jiangyang Liu, Haruka Honda, Zeng Jing, Wataru Tanaka, Takuro Hosomi, Takeshi Yanagida   +7 more
wiley   +1 more source

Long-Term Bending Behavior of Laminated Glass Plate with Temperature-Dependent Viscoelastic Interlayer. [PDF]

Materials (Basel)
Zhu X, Ni K, Xu C, Zhao A, Wu P.
europepmc   +1 more source

Influence of passivating interlayers on the carrier selectivity of MoO

The application of molybdenum oxide (MoOx) as a hole-selective contact for silicon-based solar cells has been explored due to superior optical transmittance and potentially leaner manufacturing compared to fully amorphous silicon-based heterojunction ...
Fatemeh Hashemi, Paula Bronsveld, Jimmy Melskens, Agnes Mewe, Arthur Weeber, Mike Tang Soo Kiong Ah Sen, Gaby Janssen, Paul Procel-Moya   +7 more
core   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source