Results 221 to 230 of about 163,915 (293)

Optimization of SWCNT‐FET Biosensors by Aptamer Engineering and Toehold‐Mediated Strand Displacement

open access: yesAdvanced Science, EarlyView.
Aptamer‐based single‐walled carbon nanotube (SWCNT) field‐effect transistor (FET) biosensors are developed for label‐free, real‐time biomarker detection. Truncated DNA aptamers enhance sensitivity through improved conformational switching. A toehold‐mediated strand displacement (TMSD) strategy optimizes functionalization and simplifies fabrication. The
Haosen Miao   +8 more
wiley   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix   +10 more
wiley   +1 more source

High‐Density and Scalable Graphene Hall Sensor Arrays Through Monolithic CMOS Integration

open access: yesAdvanced Electronic Materials, EarlyView.
This work explores strategies to create high‐density arrays of graphene Hall‐effect magnetic field sensors through monolithic integration with silicon CMOS biasing and multiplexing circuitry. High sensor yield and magnetic sensing performance are achieved through careful choices in the custom CMOS chip design and the graphene integration process.
Vasant Iyer   +4 more
wiley   +1 more source

Bandwidth-tuned Mott transition and superconductivity in moiré WSe<sub>2</sub>. [PDF]

open access: yesNature
Xia Y   +8 more
europepmc   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

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